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Chandrasekar, Hareesh
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1

Metal‐Organic Chemical Vapor Deposition Grown Low‐Temperatu..:

Venugopalarao, Anirudh ; Kanta, Shantveer ; Chandrasekar, Hareesh...
physica status solidi (a).  , 2024
Link: https://doi.org/10.1002/..
 
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2

Study of TaN-Gated p-GaN E-Mode HEMT:

Baby, Rijo ; Reshma, K. ; Chandrasekar, Hareesh...
IEEE Transactions on Electron Devices.  70 (2023)  4 - p. 1607-1612 , 2023
Link: https://doi.org/10.1109/..
 
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3

Physical design guidelines to minimize area-specific ON-res..:

Khan, Md Arif ; Muralidharan, Rangarajan ; Chandrasekar, Hareesh
Semiconductor Science and Technology.  38 (2023)  3 - p. 035021 , 2023
Link: https://doi.org/10.1088/..
 
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4

Compensation Dopant-Free GaN-on-Si HEMTs With a Polarizatio..:

Gowrisankar, Aniruddhan ; Charan, Vanjari Sai ; Chandrasekar, Hareesh...
IEEE Transactions on Electron Devices.  70 (2023)  4 - p. 1622-1627 , 2023
Link: https://doi.org/10.1109/..
 
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5

AlGaN/GaN HEMTs on Silicon With a Graded-AlGaN Back-Barrier..:

, In: 2022 IEEE International Conference on Emerging Electronics (ICEE),
Gowrisankar, Aniruddhan ; Vanjari, Sai Charan ; Bardhan, Abheek... - p. 1-4 , 2022
Link: https://doi.org/10.1109/..
 
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6

Study of the impact of interface traps associated with SiNX..:

Baby, Rijo ; Venugopalrao, Anirudh ; Chandrasekar, Hareesh...
Semiconductor Science and Technology.  37 (2022)  3 - p. 035005 , 2022
Link: https://doi.org/10.1088/..
 
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7

Electron transport of perovskite oxide BaSnO3 on (110) DySc..:

Cheng, Junao ; Yang, Hao ; Combs, Nicholas G....
Applied Physics Letters.  118 (2021)  4 - p. , 2021
Link: https://doi.org/10.1063/..
 
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8

Role of Surface Processes in Growth of Monolayer MoS2: Impl..:

Kumar, V. Kranthi ; Rathkanthiwar, Shashwat ; Rao, Ankit...
ACS Applied Nano Materials.  4 (2021)  7 - p. 6734-6744 , 2021
Link: https://doi.org/10.1021/..
 
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9

Hybrid BaTiO3/SiNx/AlGaN/GaN lateral Schottky barrier diode..:

Rahman, Mohammad Wahidur ; Chandrasekar, Hareesh ; Razzak, Towhidur..
Applied Physics Letters.  119 (2021)  1 - p. , 2021
Link: https://doi.org/10.1063/..
 
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10

Low voltage drop tunnel junctions grown monolithically by M..:

Jamal-Eddine, Zane ; Hasan, Syed M. N. ; Gunning, Brendan...
Applied Physics Letters.  118 (2021)  5 - p. , 2021
Link: https://doi.org/10.1063/..
 
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11

Re-engineering transition layers in AlGaN/GaN HEMT on Si fo..:

Remesh, Nayana ; Chandrasekar, Hareesh ; Venugopalrao, Anirudh...
Journal of Applied Physics.  130 (2021)  7 - p. , 2021
Link: https://doi.org/10.1063/..
 
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12

All-MOCVD-grown gallium nitride diodes with ultra-low resis..:

Hasan, Syed M N ; Gunning, Brendan P ; J.-Eddine, Zane...
Journal of Physics D: Applied Physics.  54 (2021)  15 - p. 155103 , 2021
Link: https://doi.org/10.1088/..
 
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13

BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with bre..:

Razzak, Towhidur ; Chandrasekar, Hareesh ; Hussain, Kamal...
Applied Physics Letters.  116 (2020)  2 - p. , 2020
Link: https://doi.org/10.1063/..
 
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14

Fully transparent GaN homojunction tunnel junction-enabled ..:

Jamal-Eddine, Zane ; Hasan, Syed M. N. ; Gunning, Brendan...
Applied Physics Letters.  117 (2020)  5 - p. , 2020
Link: https://doi.org/10.1063/..
 
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15

Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitanc..:

Chandrasekar, Hareesh ; Razzak, Towhidur ; Wang, Caiyu...
Advanced Electronic Materials.  6 (2020)  8 - p. 2000074 , 2020
Link: https://doi.org/10.1002/..
 
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