E-LIB Suche - Ergebnisse für: Chang, Edward-Yi

1

The Effect of Fluorine Doping in the Charge Trapping Layer ..:

Yang, Tsung-Ying ; Wu, Sih-Rong ; Wu, Jui-Sheng...
IEEE Transactions on Electron Devices. 71 (2024) 6 - p. 3603-3608 , 2024

Link: https://doi.org/10.1109/..

2

Improving NDR and RF Characteristics of InGaAs MOSFETs thro..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),

Chen, Mu-Yu ; Chang, Edward-Yi - p. 1-2 , 2024

Link: https://doi.org/10.1109/..

3

High Frequency Pulsed Laser Driver Using Complementary GaN ..:

Liu, Ching-Yao ; Lin, Chun-Hsiung ; Kuo, Hao-Chung...
IEEE Transactions on Power Electronics. , 2024

Link: https://doi.org/10.1109/..

4

Investigation of the Effect of Different SiNx Thicknesses o..:

Hsu, Che-Wei ; Lin, Yueh-Chin ; Lee, Ming-Wen.
Electronics. 12 (2023) 20 - p. 4336 , 2023

Link: https://doi.org/10.3390/..

5

Power Receiving Unit for High-Power Resonant Wireless Power..:

Liu, Ching-Yao ; Tang, Hsien-Chung ; Shieh, Yueh-Tsung...
Energies. 16 (2023) 23 - p. 7856 , 2023

Link: https://doi.org/10.3390/..

6

High Current Density and Low Ron Quaternary InAlGaN MIS-HEM..:

Weng, You-Chen ; Chung, Chin-Han ; Ma, Cheng-Jun...
ECS Journal of Solid State Science and Technology. 12 (2023) 7 - p. 075003 , 2023

Link: https://doi.org/10.1149/..

7

Effects of In/Zn composition on the Performance of Ultra-th..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),

Liang, Yan-Kui ; Zheng, June-Yang ; Lin, Jing-Wei... - p. 1-3 , 2023

Link: https://doi.org/10.1109/..

8

Enhanced Device Characteristics of InGaAs MOSFETs Using Hig..:

, In: 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT),

Huang, Ping ; Chen, Mu-Yu ; Chang, Edward-Yi - p. 1-2 , 2023

Link: https://doi.org/10.1109/..

9

Analysis of Trapping Effect on Large-Signal Characteristics..:

Chen, Kun-Ming ; Lin, Chuang-Ju ; Chuang, Chia-Wei...
Micromachines. 14 (2023) 5 - p. 1011 , 2023

Link: https://doi.org/10.3390/..

10

Resonant Mechanism for a Long-Distance Wireless Power Trans..:

Liu, Ching-Yao ; Wu, Chih-Chiang ; Tang, Li-Chuan...
Energies. 16 (2023) 9 - p. 3657 , 2023

Link: https://doi.org/10.3390/..

11

Effect of High-Pressure GaN Nucleation Layer on the Perform..:

Weng, You-Chen ; Hsiao, Ming-Yao ; Lin, Chun-Hsiung..
Materials. 16 (2023) 9 - p. 3376 , 2023

Link: https://doi.org/10.3390/..

12

Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin G..:

Lee, Ming-Wen ; Lin, Yueh-Chin ; Hsu, Heng-Tung..
Micromachines. 14 (2023) 5 - p. 931 , 2023

Link: https://doi.org/10.3390/..

13

Improvement of AlGaN/GaN High-Electron-Mobility Transistor ..:

Lee, Ming-Wen ; Chuang, Cheng-Wei ; Gamiz, Francisco..
Micromachines. 15 (2023) 1 - p. 81 , 2023

Link: https://doi.org/10.3390/..

14

Electrical Characteristics of Ultrathin InZnO Thin-Film Tra..:

Liang, Yan-Kui ; Lin, Jing-Wei ; Peng, Li-Chi...
IEEE Transactions on Electron Devices. 70 (2023) 3 - p. 1067-1072 , 2023

Link: https://doi.org/10.1109/..

15

A Turn-Ratio-Changing Half-Bridge CLLC DC–DC Bidirectional ..:

Shieh, Yueh-Tsung ; Wu, Chih-Chiang ; Jeng, Shyr-Long...
Energies. 16 (2023) 16 - p. 5928 , 2023

Link: https://doi.org/10.3390/..