E-LIB Suche - Ergebnisse für: Chang, Teng-Jan

1

Wake-up-free ferroelectric Hf0.5Zr0.5O2 thin films characte..:

Chang, Teng-Jan ; Chen, Hsing-Yang ; Wang, Chin-I...
Acta Materialia. 246 (2023) - p. 118707 , 2023

Link: https://doi.org/10.1016/..

2

Atomic tailoring of low-thermal-budget and nearly wake-up-f..:

Chang, Teng-Jan ; Jiang, Yu-Sen ; Yi, Sheng-Han...
Applied Surface Science. 591 (2022) - p. 153110 , 2022

Link: https://doi.org/10.1016/..

3

Ferroelectric ZrO2 ultrathin films on silicon for metal-fer..:

Jiang, Yu-Sen ; Huang, Kuei-Wen ; Yi, Sheng-Han...
Journal of the European Ceramic Society. 42 (2022) 15 - p. 6997-7003 , 2022

Link: https://doi.org/10.1016/..

4

Impact of a TiN Capping Layer on Phase Transformation and C..:

Wang, Chun-Yuan ; Wang, Chin-I ; Yi, Sheng-Han...
ACS Applied Electronic Materials. 3 (2021) 4 - p. 1937-1946 , 2021

Link: https://doi.org/10.1021/..

5

Suppression of short channel effects in ferroelectric Si ju..:

Chang, Teng-Jan ; Wang, Ting-Yun ; Wang, Chin-I...
Journal of Materials Chemistry C. 9 (2021) 26 - p. 8285-8293 , 2021

Link: https://doi.org/10.1039/..

6

Atomic layer deposited TiN capping layer for sub-10 nm ferr..:

Wang, Chin-I ; Wang, Chun-Yuan ; Chang, Teng-Jan...
Applied Surface Science. 570 (2021) - p. 151152 , 2021

Link: https://doi.org/10.1016/..

7

Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2thi..:

Wang, Chin-I ; Chen, Hsin-Yang ; Wang, Chun-Yuan...
Journal of Materials Chemistry C. 9 (2021) 37 - p. 12759-12767 , 2021

Link: https://doi.org/10.1039/..

8

Operation bandwidth of negative capacitance characterized b..:

Jiang, Yu-Sen ; Jeng, Yu-En ; Yin, Yu-Tung...
Journal of Materials Chemistry C. 9 (2021) 4 - p. 1401-1409 , 2021

Link: https://doi.org/10.1039/..

9

Dielectric properties and reliability enhancement of atomic..:

Chou, Chun-Yi ; Chang, Teng-Jan ; Wang, Chin-I...
Journal of Materials Chemistry C. 8 (2020) 37 - p. 13025-13032 , 2020

Link: https://doi.org/10.1039/..

10

Paraelectric/antiferroelectric/ferroelectric phase transfor..:

Wang, Chun-Yuan ; Wang, Chin-I ; Yi, Sheng-Han...
Materials & Design. 195 (2020) - p. 109020 , 2020

Link: https://doi.org/10.1016/..

11

Leakage current lowering and film densification of ZrO2 hig..:

Huang, Kuei-Wen ; Chang, Teng-Jan ; Wang, Chun-Yuan...
Materials Science in Semiconductor Processing. 109 (2020) - p. 104933 , 2020

Link: https://doi.org/10.1016/..

12

Atomic Layer Densification of AlN Passivation Layer on Epit..:

Wang, Chin-I ; Chang, Teng-Jan ; Yin, Yu-Tung...
ACS Applied Electronic Materials. 2 (2020) 4 - p. 891-897 , 2020

Link: https://doi.org/10.1021/..

13

Enhancement of Dielectric Properties of Nanoscale HfO2 Thin..:

Yin, Yu-Tung ; Jiang, Yu-Sen ; Lin, Yu-Ting...
ACS Applied Electronic Materials. 2 (2020) 8 - p. 2440-2448 , 2020

Link: https://doi.org/10.1021/..

14

High-K Gate Dielectrics Treated with in Situ Atomic Layer B..:

Chang, Teng-Jan ; Lee, Wei-Hao ; Wang, Chin-I...
ACS Applied Electronic Materials. 1 (2019) 7 - p. 1091-1098 , 2019

Link: https://doi.org/10.1021/..

15

Suppression of GeOx interfacial layer and enhancement of th..:

Wang, Chin-I. ; Chang, Teng-Jan ; Wang, Chun-Yuan...
RSC Advances. 9 (2019) 2 - p. 592-598 , 2019

Link: https://doi.org/10.1039/..