E-LIB Suche - Ergebnisse für: Chang Yi, Edward

1

Characterizations of GaN Films Grown on Si (111) Substrates..:

Tinh, Tran Binh ; Chang Yi, Edward ; Lin, Kung Liang...
ECS Transactions. 50 (2013) 3 - p. 461-467 , 2013

Link: https://doi.org/10.1149/..

2

Demonstration of Wake-Up Free 6 nm Ultrathin ZrO₂-HfO₂ Supe..:

Liang, Yan-Kui ; Liu, Zhenhong ; Cai, Zuocheng...
IEEE Electron Device Letters. 45 (2024) 8 - p. 1468-1471 , 2024

Link: https://doi.org/10.1109/..

3

Effect of Gamma Irradiation on the Structure, Morphology, a..:

Aggarwal, Pallavi ; Bisht, Prashant ; Jana, Subhajit...
Advanced Materials Technologies. , 2024

Link: https://doi.org/10.1002/..

4

Reactive sputtering of ferroelectric AlScN films with H2 ga..:

Chen, Si-Meng ; Hoshii, Takuya ; Wakabayashi, Hitoshi...
Japanese Journal of Applied Physics. 63 (2024) 3 - p. 03SP45 , 2024

Link: https://doi.org/10.35848..

5

Improved Stability of BEOL-Compatible Highly Scaled Ultrath..:

Liang, Yan-Kui ; Li, Wei-Li ; Lin, Yu-Lon...
IEEE Transactions on Electron Devices. , 2024

Link: https://doi.org/10.1109/..

6

Highly Scaled BEOL-Compatible Thin Film Transistors With Ul..:

Liang, Yan-Kui ; Zheng, Jun-Yang ; Lin, Yu-Lon...
IEEE Transactions on Electron Devices. 71 (2024) 6 - p. 3671-3677 , 2024

Link: https://doi.org/10.1109/..

7

Low contact resistance and high breakdown voltage of AlGaN/..:

Hieu, Le Trung ; Rathaur, Shivendra K ; Lu, Chee-How...
Semiconductor Science and Technology. 39 (2024) 8 - p. 085006 , 2024

Link: https://doi.org/10.1088/..

8

Reliability assessment of high-power GaN-HEMT devices with ..:

Rathaur, Shivendra K. ; Hieu, Le Trung ; Dixit, Abhisek.
Applied Physics Express. 17 (2024) 7 - p. 076501 , 2024

Link: https://doi.org/10.35848..

9

Suppression of Total Dose Effects on the Performance of InA..:

Chang-Chien, Yi-En ; Chung, Chin-Han ; Yang, Chih-Yi...
IEEE Transactions on Device and Materials Reliability. , 2024

Link: https://doi.org/10.1109/..

10

Adsorption and reversible detection of toxic halogens gases..:

Chang, Yee Hui Robin ; Yeoh, Keat Hoe ; Jiang, Junke...
Materials Today Communications. 39 (2024) - p. 108623 , 2024

Link: https://doi.org/10.1016/..

11

Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu M..:

Tseng, Howie ; Lin, Yueh-Chin ; Cheng, Chieh...
IEEE Journal of the Electron Devices Society. 12 (2024) - p. 268-274 , 2024

Link: https://doi.org/10.1109/..

12

Analysis of breakdown voltage for GaN MIS-HEMT with various..:

Langpoklakpam, Catherine ; Hsiao, Yi-Kai ; Yi Chang, Edward..
Solid-State Electronics. 216 (2024) - p. 108930 , 2024

Link: https://doi.org/10.1016/..

13

Impact of In and Ga Fractions in Lattice-Matched InAlGaN Ba..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),

Langpoklakpam, Catherine ; Hsiao, Yi-Kai ; Lin, Chun-Hsiung.. - p. 1-2 , 2024

Link: https://doi.org/10.1109/..

14

Investigation on Positive Bias-Induced Threshold Voltage In..:

, In: 2024 Device Research Conference (DRC),

Rathaur, Shivendra K. ; Dixit, Abhisek ; Chang, Edward Yi - p. 1-2 , 2024

Link: https://doi.org/10.1109/..

15

Performance and Threshold Voltage Reliability of Quaternary..:

Rathaur, Shivendra K. ; Ma, Cheng-Jun ; Dixit, Abhisek..
IEEE Transactions on Device and Materials Reliability. , 2024

Link: https://doi.org/10.1109/..