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Chanthaphan, Atthawut
17
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Online (17)
Mediatypes
Articles (Online) (15)
OpenAccess-fulltext (2)
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1
Structure and Surface Morphology of Thermal SiO2 Grown on 4..:
Chanthaphan, Atthawut
;
Katsu, Yoshihito
;
Hosoi, Takuji
..
Materials Science Forum. 897 (2017) - p. 340-343 , 2017
Link:
https://doi.org/10.4028/..
?
2
Improvement of SiO2/4H-SiC Interface Quality by Post-Oxidat..:
Chanthaphan, Atthawut
;
Cheng, Yen Hung
;
Hosoi, Takuji
..
Materials Science Forum. 858 (2016) - p. 627-630 , 2016
Link:
https://doi.org/10.4028/..
?
3
Insight into metal-enhanced oxidation using barium on 4H-Si..:
Chanthaphan, Atthawut
;
Katsu, Yoshihito
;
Hosoi, Takuji
..
Japanese Journal of Applied Physics. 55 (2016) 12 - p. 120303 , 2016
Link:
https://doi.org/10.7567/..
?
4
Cathodoluminescence Study of SiO2/4H-SiC Structures Treated..:
Chanthaphan, Atthawut
;
Fukushima, Yuta
;
Yamamoto, Kenji
...
Materials Science Forum. 858 (2016) - p. 445-448 , 2016
Link:
https://doi.org/10.4028/..
?
5
Study of SiO2/4H-SiC interface nitridation by post-oxidatio..:
Chanthaphan, Atthawut
;
Hosoi, Takuji
;
Shimura, Takayoshi
.
AIP Advances. 5 (2015) 9 - p. 097134 , 2015
Link:
https://doi.org/10.1063/..
?
6
Cathodoluminescence study of radiative interface defects in..:
Fukushima, Yuta
;
Chanthaphan, Atthawut
;
Hosoi, Takuji
..
Applied Physics Letters. 106 (2015) 26 - p. , 2015
Link:
https://doi.org/10.1063/..
?
7
Improved bias-temperature instability characteristics in Si..:
Chanthaphan, Atthawut
;
Hosoi, Takuji
;
Nakano, Yuki
...
Applied Physics Letters. 104 (2014) 12 - p. , 2014
Link:
https://doi.org/10.1063/..
?
8
Degradation of SiO2/SiC Interface Properties due to Mobile ..:
Chanthaphan, Atthawut
;
Hosoi, Takuji
;
Nakano, Yuki
...
Materials Science Forum. 778-780 (2014) - p. 541-544 , 2014
Link:
https://doi.org/10.4028/..
?
9
Understanding and controlling bias-temperature instability ..:
Chanthaphan, Atthawut
;
Hosoi, Takuji
;
Nakano, Yuki
...
Applied Physics Letters. 102 (2013) 9 - p. , 2013
Link:
https://doi.org/10.1063/..
?
10
Investigation of unusual mobile ion effects in thermally gr..:
Chanthaphan, Atthawut
;
Hosoi, Takuji
;
Mitani, Shuhei
...
Applied Physics Letters. 100 (2012) 25 - p. 252103 , 2012
Link:
https://doi.org/10.1063/..
?
11
Impact of Interface Defect Passivation on Conduction Band O..:
Hosoi, Takuji
;
Kirino, Takashi
;
Chanthaphan, Atthawut
...
Materials Science Forum. 717-720 (2012) - p. 721-724 , 2012
Link:
https://doi.org/10.4028/..
?
12
Synchrotron Radiation Photoelectron Spectroscopy Study of T..:
Watanabe, Heiji
;
Hosoi, Takuji
;
Kirino, Takashi
...
Materials Science Forum. 717-720 (2012) - p. 697-702 , 2012
Link:
https://doi.org/10.4028/..
?
13
(Invited) Impact of Stacked AlON/SiO2 Gate Dielectrics for ..:
Watanabe, Heiji
;
Kirino, Takashi
;
Uenishi, Yusuke
...
ECS Transactions. 35 (2011) 2 - p. 265-274 , 2011
Link:
https://doi.org/10.1149/..
?
14
(Invited) Gate Stack Technologies for SiC Power MOSFETs:
Watanabe, Heiji
;
Hosoi, Takuji
;
Kirino, Takashi
...
ECS Transactions. 41 (2011) 3 - p. 77-90 , 2011
Link:
https://doi.org/10.1149/..
?
15
Synchrotron x-ray photoelectron spectroscopy study on therm..:
Watanabe, Heiji
;
Hosoi, Takuji
;
Kirino, Takashi
...
Applied Physics Letters. 99 (2011) 2 - p. , 2011
Link:
https://doi.org/10.1063/..
1-15