E-LIB Suche - Ergebnisse für: Chao, Tien Sheng

1

Current Transport Mechanism for HfO[sub 2] Gate Dielectrics..:

Wu, Woei Cherng ; Lai, Chao Sung ; Wang, Tzu Ming...
Electrochemical and Solid-State Letters. 11 (2008) 1 - p. H15 , 2008

Link: https://doi.org/10.1149/..

2

Characteristics of Fluorine Implantation for HfO2 Gate Diel..:

Lai, Chao Sung ; Wu, Woei Cherng ; Wang, Jer Chyi.
Japanese Journal of Applied Physics. 45 (2006) 4S - p. 2893 , 2006

Link: https://doi.org/10.1143/..

3

Complementary carbon nanotube-gated carbon nanotube thin-fi..:

Chen, Bae-Horng ; Lin, Horng-Chih ; Huang, Tiao-Yuan...
Applied Physics Letters. 88 (2006) 9 - p. , 2006

Link: https://doi.org/10.1063/..

4

Reduction of Donor-like Interface Traps of n-Type Metal–Oxi..:

Chao, Tien Sheng ; Lin, Yu Hsin ; Yang, Wen Luh
Japanese Journal of Applied Physics. 45 (2006) 1R - p. 61 , 2006

Link: https://doi.org/10.1143/..

5

Suppression of interfacial reaction for HfO2 on silicon by ..:

Lai, Chao Sung ; Wu, Woei Cherng ; Chao, Tien Sheng...
Applied Physics Letters. 89 (2006) 7 - p. , 2006

Link: https://doi.org/10.1063/..

6

A carbon nanotube field effect transistor with tunable cond..:

Chen, Bae-Horng ; Wei, Jeng-Hua ; Lo, Po-Yuan...
Solid-State Electronics. 50 (2006) 7-8 - p. 1341-1348 , 2006

Link: https://doi.org/10.1016/..

7

Characterization of CF4-plasma fluorinated HfO2 gate dielec..:

Lai, Chao Sung ; Wu, Woei Cherng ; Wang, Jer Chyi.
Applied Physics Letters. 86 (2005) 22 - p. , 2005

Link: https://doi.org/10.1063/..

8

Ultra-Shallow Junction Formation using Implantation through..:

Hsien, Li Jen ; Chan, Yi Lin ; Chao, Tien Sheng..
Japanese Journal of Applied Physics. 41 (2002) Part 1, No. 7A - p. 4519-4520 , 2002

Link: https://doi.org/10.1143/..

9

High-k cobalt–titanium oxide dielectrics formed by oxidatio..:

Pan, Tung Ming ; Lei, Tan Fu ; Chao, Tien Sheng
Applied Physics Letters. 78 (2001) 10 - p. 1439-1441 , 2001

Link: https://doi.org/10.1063/..

10

Electrical Characteristics of Thin Cerium Oxide Film on Sil..:

Pan, Tung Ming ; Chien, Chao Hsin ; Lei, Tan Fu..
Electrochemical and Solid-State Letters. 4 (2001) 9 - p. F15 , 2001

Link: https://doi.org/10.1149/..

11

Comparison of ultrathin CoTiO3 and NiTiO3 high-k gate diele..:

Pan, Tung Ming ; Lei, Tan Fu ; Chao, Tien Sheng
Journal of Applied Physics. 89 (2001) 6 - p. 3447-3452 , 2001

Link: https://doi.org/10.1063/..

12

Improvement of Polysilicon Oxide Integrity Using NF3-Anneal..:

Yang, Wen Luh ; Shieh, Ming Sun ; Chen, Yu Min...
Japanese Journal of Applied Physics. 39 (2000) 6B - p. L562 , 2000

Link: https://doi.org/10.1143/..

13

Optimum Conditions for Novel One-Step Cleaning Method for P..:

Pan, Tung Ming ; Lei, Tan Fu ; Chao, Tien Sheng..
Japanese Journal of Applied Physics. 39 (2000) 10R - p. 5805 , 2000

Link: https://doi.org/10.1143/..

14

A Novel Si‐B Diffusion Source for p + ‐ Poly ‐ Si Gate:

Chao, Tien Sheng ; Kuo, Chung Ping ; Chen, T. P..
Journal of The Electrochemical Society. 146 (1999) 10 - p. 3852-3855 , 1999

Link: https://doi.org/10.1149/..

15

Improvement of Reliability of Metal-Oxide Semiconductor Fie..:

Lai, Chao Sung ; Chao, Tien Sheng ; Lei, Tan Fu...
Japanese Journal of Applied Physics. 37 (1998) 10R - p. 5507 , 1998

Link: https://doi.org/10.1143/..