E-LIB Suche - Ergebnisse für: Chasin, A.

1

Investigation of the Impact of Ferroelectricity Boosted Gat..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),

Higashi, Y. ; Bastos, J. P. ; Chasin, A.... - p. 1-6 , 2024

Link: https://doi.org/10.1109/..

2

Side and Corner Region Non-Uniformities in Grown SiO2 and T..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),

Bastos, J. P. ; O'Sullivan, B. J. ; Higashi, Y.... - p. P36.PI-1-P36.PI-7 , 2024

Link: https://doi.org/10.1109/..

3

DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),

O'Sullivan, B. J. ; Alian, A. ; Sibaja-Hernandez, A.... - p. 1-9 , 2024

Link: https://doi.org/10.1109/..

4

Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors W..:

Guo, Zixiang ; Zhang, En Xia ; Chasin, A....
IEEE Transactions on Nuclear Science. 71 (2024) 4 - p. 461-468 , 2024

Link: https://doi.org/10.1109/..

5

Lowest IOFF −21 A/μm in capacitorless DRAM achieved by Reac..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),

Belmonte, A. ; Kundu, S. ; Subhechha, S.... - p. 1-2 , 2023

Link: https://doi.org/10.23919..

6

Reliability challenges in Forksheet Devices: (Invited Paper:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),

Bury, E. ; Vandemaele, M. ; Franco, J.... - p. 1-8 , 2023

Link: https://doi.org/10.1109/..

7

Trapping of Hot Carriers in the Forksheet FET Wall: A TCAD ..:

Vandemaele, M. ; Kaczer, B. ; Tyaginov, S....
IEEE Electron Device Letters. 44 (2023) 2 - p. 197-200 , 2023

Link: https://doi.org/10.1109/..

8

Degradation Mapping and Impact of Device Dimension on IGZO ..:

Rinaudo, Pietro ; Chasin, A. ; Franco, J....
IEEE Transactions on Device and Materials Reliability. 23 (2023) 3 - p. 337-345 , 2023

Link: https://doi.org/10.1109/..

9

Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors:

Guo, Zixiang ; Li, Kan ; Li, Xun...
IEEE Transactions on Nuclear Science. 70 (2023) 8 - p. 2002-2007 , 2023

Link: https://doi.org/10.1109/..

10

A Comprehensive Cryogenic CMOS Variability and Reliability ..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),

Grill, A. ; Michl, J. ; Diaz-Fortuny, J.... - p. 1-3 , 2023

Link: https://doi.org/10.1109/..

11

On The Contribution of Secondary Holes in Hot-Carrier Degra..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),

Tyaginov, S.E. ; Bury, E. ; Grill, A.... - p. 1-3 , 2023

Link: https://doi.org/10.1109/..

12

Modelling ultra-fast threshold voltage instabilities in Hf-..:

, In: 2022 IEEE International Reliability Physics Symposium (IRPS),

O'Sullivan, B. J. ; Truijen, B. ; Putcha, V.... - p. 4A.4-1-4A.4-8 , 2022

Link: https://doi.org/10.1109/..

13

Degradation mapping of IGZO TFTs:

, In: 2022 IEEE International Integrated Reliability Workshop (IIRW),

Rinaudo, P. ; Chasin, A. ; Franco, J.... - p. 1-5 , 2022

Link: https://doi.org/10.1109/..

14

Characterizing and Modelling of the BTI Reliability in IGZO..:

, In: 2022 International Electron Devices Meeting (IEDM),

Wu, Z. ; Chasin, A. ; Franco, J.... - p. 30.1.1-30.1.4 , 2022

Link: https://doi.org/10.1109/..

15

Trap-polarization interaction during low-field trap charact..:

, In: 2022 IEEE International Reliability Physics Symposium (IRPS),

Truijen, B. ; O'Sullivan, B. ; Alam, Md Nur K.... - p. P12-1-P12-4 , 2022

Link: https://doi.org/10.1109/..