E-LIB Suche - Ergebnisse für: Chatty, Kiran

1

Optimized 750V SiC MOSFETs for Electric Vehicle Inverter Op..:

Salemi, Arash ; Zhu, Bob ; Bui-Quang, Phong...
Key Engineering Materials. 945 (2023) - p. 67-70 , 2023

Link: https://doi.org/10.4028/..

2

Scalable Test System for Long Term Reliability Assessment o..:

, In: 2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA),

Zhu, Lisi ; Sheridan, David C. ; Chatty, Kiran... - p. 1-5 , 2023

Link: https://doi.org/10.1109/..

3

Comparative Study on the Repetitive Unclamped-Inductive-Swi..:

Ji, In Hwan ; Chowdhury, Sauvik ; Powell, Blake...
Materials Science Forum. 963 (2019) - p. 792-796 , 2019

Link: https://doi.org/10.4028/..

4

650V and 900V, 150A SiC Schottky diode for automotive appli..:

, In: 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA),

Chatty, Kiran ; Banerjee, Sujit ; Matocha, Kevin - p. 143-146 , 2016

Link: https://doi.org/10.1109/..

5

Advanced SiC Power MOSFETs Manufactured on 150mm SiC Wafers:

Matocha, Kevin ; Banerjee, Sujit ; Chatty, Kiran
Materials Science Forum. 858 (2016) - p. 803-806 , 2016

Link: https://doi.org/10.4028/..

6

1700V, 5.5mOhm-cm2 4H-SiC DMOSFET with Stable 225°C Operati..:

Matocha, Kevin ; Chatty, Kiran ; Banerjee, Sujit.
Materials Science Forum. 778-780 (2014) - p. 903-906 , 2014

Link: https://doi.org/10.4028/..

7

900V, 1.46mOhm-cm2 4H-SiC Depletion Mode Vertical JFET:

Chatty, Kiran ; Sheridan, David C. ; Bondarenko, Volodymyr..
Materials Science Forum. 740-742 (2013) - p. 915-920 , 2013

Link: https://doi.org/10.4028/..

8

Recent Advances in VJFETs at SemiSouth:

Chatty, Kiran ; Sheridan, David C. ; Bondarenko, Vladomyr...
ECS Transactions. 50 (2013) 3 - p. 53-63 , 2013

Link: https://doi.org/10.1149/..

9

Demonstration of SiC Vertical Trench JFET Reliability:

Speer, Kevin M. ; Chatty, Kiran ; Bondarenko, Volodymyr...
Materials Science Forum. 717-720 (2012) - p. 1017-1020 , 2012

Link: https://doi.org/10.4028/..

10

Reliability aspects of gate oxide under ESD pulse stress:

Ille, Adrien ; Stadler, Wolfgang ; Pompl, Thomas...
Microelectronics Reliability. 49 (2009) 12 - p. 1407-1416 , 2009

Link: https://doi.org/10.1016/..

11

Design optimization of gate-silicided ESD NMOSFETs in a 45 ..:

Alvarez, David ; Chatty, Kiran ; Russ, Christian...
Microelectronics Reliability. 49 (2009) 12 - p. 1417-1423 , 2009

Link: https://doi.org/10.1016/..

12

Design automation to suppress cable discharge event (CDE) i..:

Brennan, Ciaran J. ; Chatty, Kiran ; Sloan, Jeff...
Microelectronics Reliability. 47 (2007) 7 - p. 1069-1073 , 2007

Link: https://doi.org/10.1016/..

13

Implementation of diode and bipolar triggered SCRs for CDM ..:

Brennan, Ciaran J. ; Chang, Shunhua ; Woo, Min..
Microelectronics Reliability. 47 (2007) 7 - p. 1030-1035 , 2007

Link: https://doi.org/10.1016/..

14

External Latchup Characteristics Under Static and Transient..:

, In: 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual,

Kontos, Dimitris ; Gauthier, Robert ; Chatty, Kiran... - p. None , 2007

Link: https://doi.org/10.1109/..

15

Study of Design Factors Affecting Turn-on Time of Silicon C..:

, In: 2006 IEEE International Reliability Physics Symposium Proceedings,

Di Sarro, James ; Chatty, Kiran ; Gauthier, Robert. - p. None , 2006

Link: https://doi.org/10.1109/..