E-LIB Suche - Ergebnisse für: Chen, Jr-Tai

1

Characterization of Trapping Effects Related to Carbon Dopi..:

Ferrand-Drake Del Castillo, Ragnar ; Chen, Ding-Yuan ; Chen, Jr-Tai...
IEEE Transactions on Electron Devices. 71 (2024) 6 - p. 3596-3602 , 2024

Link: https://doi.org/10.1109/..

2

Acoustoelectric Effect in Sezawa Mode Saw Devices on Algan/..:

, In: 2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS),

Ahmed, Imtiaz ; Chen, Jr-Tai ; Weinstein, Dana - p. 1079-1082 , 2024

Link: https://doi.org/10.1109/..

3

Electronic Properties of Group-III Nitride Semiconductors a..:

Armakavicius, Nerijus ; Kühne, Philipp ; Papamichail, Alexis...
Materials. 17 (2024) 13 - p. 3343 , 2024

Link: https://doi.org/10.3390/..

4

Transconductance Overshoot, a New Trap-Related Effect in Al..:

Zhan, Gao ; Rampazzo, Fabiana ; De Santi, Carlo...
IEEE Transactions on Electron Devices. 70 (2023) 6 - p. 3005-3010 , 2023

Link: https://doi.org/10.1109/..

5

Super-High-Frequency Low-Loss Sezawa Mode SAW Devices in a ..:

Ahmed, Imtiaz ; Rawat, Udit ; Chen, Jr-Tai.
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control. 70 (2023) 4 - p. 291-301 , 2023

Link: https://doi.org/10.1109/..

6

Structural investigation of ultra-low resistance deeply rec..:

Chen, Ding-Yuan ; Persson, Axel R ; Darakchieva, Vanya...
Semiconductor Science and Technology. 38 (2023) 10 - p. 105006 , 2023

Link: https://doi.org/10.1088/..

7

AlGaN/GaN/AlN 'Buffer-Free' High Voltage MISHEMTs with Si-r..:

, In: 2022 Compound Semiconductor Week (CSW),

Hult, Bjorn ; Thorsell, Mattias ; Chen, Jr-Tai. - p. 1-2 , 2022

Link: https://doi.org/10.1109/..

8

Investigation of Isolation Approaches and the Stoichiometry..:

Hult, Björn ; Thorsell, Mattias ; Chen, Jr-Tai.
physica status solidi (a). 220 (2022) 8 - p. , 2022

Link: https://doi.org/10.1002/..

9

Impact of in situ NH3 pre-treatment of LPCVD SiN passivatio..:

Chen, Ding-Yuan ; Persson, Axel R ; Wen, Kai-Hsin...
Semiconductor Science and Technology. 37 (2022) 3 - p. 035011 , 2022

Link: https://doi.org/10.1088/..

10

Impact of the Channel Thickness on Electron Confinement in ..:

Chen, Ding-Yuan ; Wen, Kai-Hsin ; Thorsell, Mattias...
physica status solidi (a). , 2022

Link: https://doi.org/10.1002/..

11

Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN..:

Gao, Zhan ; Rampazzo, Fabiana ; Meneghini, Matteo...
Microelectronics Reliability. 126 (2021) - p. 114318 , 2021

Link: https://doi.org/10.1016/..

12

N-polar AlN nucleation layers grown by hot-wall MOCVD on Si..:

Zhang, Hengfang ; Paskov, Plamen P. ; Kordina, Olof..
Physica B: Condensed Matter. 580 (2020) - p. 411819 , 2020

Link: https://doi.org/10.1016/..

13

Transmorphic epitaxial growth of AlN nucleation layers on S..:

Lu, Jun ; Chen, Jr-Tai ; Dahlqvist, Martin...
Applied Physics Letters. 115 (2019) 22 - p. , 2019

Link: https://doi.org/10.1063/..

14

Erratum: "A GaN–SiC hybrid material for high-frequency and ..:

Chen, Jr-Tai ; Bergsten, Johan ; Lu, Jun...
Applied Physics Letters. 113 (2018) 7 - p. , 2018

Link: https://doi.org/10.1063/..

15

A versatile low-resistance ohmic contact process with ohmic..:

Lin, Yen-Ku ; Bergsten, Johan ; Leong, Hector...
Semiconductor Science and Technology. 33 (2018) 9 - p. 095019 , 2018

Link: https://doi.org/10.1088/..