E-LIB Suche - Ergebnisse für: Chen, Jr.-Tai

1

High-quality N-polar GaN optimization by multi-step tempera..:

Zhang, Hengfang ; Chen Jr., Tai ; Papamichail, Alexis...
Journal of Crystal Growth. 603 (2023) - p. 127002 , 2023

Link: https://doi.org/10.1016/..

2

Polarity Control by Inversion Domain Suppression in N-Polar..:

Zhang, Hengfang ; Persson, Ingemar ; Chen, Jr.-Tai...
Crystal Growth & Design. 23 (2023) 2 - p. 1049-1056 , 2023

Link: https://doi.org/10.1021/..

3

On the polarity determination and polarity inversion in nit..:

Zhang, Hengfang ; Persson, Ingemar ; Papamichail, Alexis...
Journal of Applied Physics. 131 (2022) 5 - p. , 2022

Link: https://doi.org/10.1063/..

4

Optical Mapping of Local Threshold Voltage with micrometer ..:

Anjali, Anjali ; Pomeroy, James W. ; Chen, Jr-Tai.
IEEE Electron Device Letters. , 2024

Link: https://doi.org/10.1109/..

5

Characterization of Trapping Effects Related to Carbon Dopi..:

Ferrand-Drake Del Castillo, Ragnar ; Chen, Ding-Yuan ; Chen, Jr-Tai...
IEEE Transactions on Electron Devices. 71 (2024) 6 - p. 3596-3602 , 2024

Link: https://doi.org/10.1109/..

6

Acoustoelectric Effect in Sezawa Mode Saw Devices on Algan/..:

, In: 2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS),

Ahmed, Imtiaz ; Chen, Jr-Tai ; Weinstein, Dana - p. 1079-1082 , 2024

Link: https://doi.org/10.1109/..

7

Electronic Properties of Group-III Nitride Semiconductors a..:

Armakavicius, Nerijus ; Kühne, Philipp ; Papamichail, Alexis...
Materials. 17 (2024) 13 - p. 3343 , 2024

Link: https://doi.org/10.3390/..

8

Transconductance Overshoot, a New Trap-Related Effect in Al..:

Zhan, Gao ; Rampazzo, Fabiana ; De Santi, Carlo...
IEEE Transactions on Electron Devices. 70 (2023) 6 - p. 3005-3010 , 2023

Link: https://doi.org/10.1109/..

9

Structural investigation of ultra-low resistance deeply rec..:

Chen, Ding-Yuan ; Persson, Axel R ; Darakchieva, Vanya...
Semiconductor Science and Technology. 38 (2023) 10 - p. 105006 , 2023

Link: https://doi.org/10.1088/..

10

Super-High-Frequency Low-Loss Sezawa Mode SAW Devices in a ..:

Ahmed, Imtiaz ; Rawat, Udit ; Chen, Jr-Tai.
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control. 70 (2023) 4 - p. 291-301 , 2023

Link: https://doi.org/10.1109/..

11

Impact of in situ NH3 pre-treatment of LPCVD SiN passivatio..:

Chen, Ding-Yuan ; Persson, Axel R ; Wen, Kai-Hsin...
Semiconductor Science and Technology. 37 (2022) 3 - p. 035011 , 2022

Link: https://doi.org/10.1088/..

12

Investigation of Isolation Approaches and the Stoichiometry..:

Hult, Björn ; Thorsell, Mattias ; Chen, Jr-Tai.
physica status solidi (a). 220 (2022) 8 - p. , 2022

Link: https://doi.org/10.1002/..

13

AlGaN/GaN/AlN 'Buffer-Free' High Voltage MISHEMTs with Si-r..:

, In: 2022 Compound Semiconductor Week (CSW),

Hult, Bjorn ; Thorsell, Mattias ; Chen, Jr-Tai. - p. 1-2 , 2022

Link: https://doi.org/10.1109/..

14

Impact of the Channel Thickness on Electron Confinement in ..:

Chen, Ding-Yuan ; Wen, Kai-Hsin ; Thorsell, Mattias...
physica status solidi (a). , 2022

Link: https://doi.org/10.1002/..

15

Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN..:

Gao, Zhan ; Rampazzo, Fabiana ; Meneghini, Matteo...
Microelectronics Reliability. 126 (2021) - p. 114318 , 2021

Link: https://doi.org/10.1016/..