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Cheng, Chao-Ching
17012  results:
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1

Contact Optimization Through Annealing and Edge Functionali..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),
Li, Meng-Zhan ; Hung, Terry Y.T. ; Yun, Wei Sheng... - p. 1-2 , 2024
Link: https://doi.org/10.1109/..
 
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2

High-performance monolayer MoS2 nanosheet GAA transistor:

Chou, Bo-Jhih ; Chung, Yun-Yan ; Yun, Wei-Sheng...
Nanotechnology.  35 (2024)  12 - p. 125204 , 2024
Link: https://doi.org/10.1088/..
 
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3

Effect of Oxygen Treatment on the Electrical Performance an..:

Chen, Yi-Xuan ; Wang, Yi-Lin ; Li, Fu-Jyuan...
IEEE Transactions on Nanotechnology.  23 (2024)  - p. 299-302 , 2024
Link: https://doi.org/10.1109/..
 
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4

Comprehensive Study of Contact Length Scaling Down to 12 nm..:

Wu, Wen-Chia ; Hung, Terry Y. T. ; Sathaiya, D. Mahaveer...
IEEE Transactions on Electron Devices.  70 (2023)  12 - p. 6680-6686 , 2023
Link: https://doi.org/10.1109/..
 
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5

High-Performance WSe2 Top-Gate Devices with Strong Spacer D..:

Ho, Po-Hsun ; Yang, Yu-Ying ; Chou, Sui-An...
Nano Letters.  23 (2023)  22 - p. 10236-10242 , 2023
Link: https://doi.org/10.1021/..
 
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6

Scaled contact length with low contact resistance in monola..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Wu, Wen-Chia ; Hung, Terry Y.T. ; Sathaiya, D. Mahaveer... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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7

High-Performance Two-Dimensional Electronics with a Noncont..:

Ho, Po-Hsun ; Cheng, Ren-Hao ; Pao, Po-Heng...
ACS Nano.  , 2023
Link: https://doi.org/10.1021/..
 
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8

High-Endurance MoS2 FeFET with Operating Voltage Fess Than ..:

, In: 2023 International Electron Devices Meeting (IEDM),
Lee, Tsung-En ; Chiang, Hung-Li ; Chang, Chih-Yu... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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9

Status and Performance of Integration Modules Toward Scaled..:

, In: 2023 International Electron Devices Meeting (IEDM),
Chou, Ang-Sheng ; Hsu, Ching-Hao ; Lin, Yu-Tung... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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10

Conformal bilayer h-AlN epitaxy on WS2 by ALD with ultralow..:

Wang, Shin-Yuan ; Chang, Shu-Jui ; Huang, Yu-Che...
Applied Physics Letters.  123 (2023)  16 - p. , 2023
Link: https://doi.org/10.1063/..
 
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11

Monolayer-MoS2 Stacked Nanosheet Channel with C-type Metal ..:

, In: 2023 International Electron Devices Meeting (IEDM),
Chung, Yun-Yan ; Yun, Wei-Sheng ; Chou, Bo-Jhih... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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12

Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabricat..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Li, Ming-Yang ; Hsu, Ching-Hao ; Shen, Shin-Wei... - p. 290-291 , 2022
Link: https://doi.org/10.1109/..
 
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13

Statistical Assessment of High-Performance Scaled Double-Ga..:

Sun, Zheng ; Pang, Chin-Sheng ; Wu, Peng...
ACS Nano.  16 (2022)  9 - p. 14942-14950 , 2022
Link: https://doi.org/10.1021/..
 
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14

Perspective on Low-dimensional Channel Materials for Extrem..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Su, Sheng-Kai ; Chen, Edward ; Hung, Terry Y. T.... - p. 403-404 , 2022
Link: https://doi.org/10.1109/..
 
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15

Nearly Ideal Subthreshold Swing in Monolayer MoS₂ Top-Gate ..:

, In: 2022 International Electron Devices Meeting (IEDM),
Lee, Tsung-En ; Su, Yuan-Chun ; Lin, Bo-Jiun... - p. 7.4.1-7.4.4 , 2022
Link: https://doi.org/10.1109/..
 
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