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Cherkaoui, Karim
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1

Electrically active defects in Al2O3-InGaAs MOS stacks at c..:

, In: 2023 IEEE International Integrated Reliability Workshop (IIRW),
La Torraca, Paolo ; Padovani, Andrea ; Wernersson, Lars-Erik... - p. 1-5 , 2023
Link: https://doi.org/10.1109/..
 
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2

Impact of Device Geometry, Physical Doping and Electrostati..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Palmieri, Andrea ; Cherkaoui, Karim ; Aabrar, Khandker Akif... - p. 1-3 , 2023
Link: https://doi.org/10.1109/..
 
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3

Insights into Multilevel Resistive Switching in Monolayer M..:

Bhattacharjee, Shubhadeep ; Caruso, Enrico ; McEvoy, Niall...
ACS Applied Materials & Interfaces.  12 (2020)  5 - p. 6022-6029 , 2020
Link: https://doi.org/10.1021/..
 
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4

Low-Temperature RF Plasma Treatment Effect on Junctionless ..:

Gomeniuk, Yuri V. ; Gomeniuk, Y Y. ; Okholin, Pavel N...
ECS Transactions.  85 (2018)  8 - p. 137-142 , 2018
Link: https://doi.org/10.1149/..
 
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5

Examining the relationship between capacitance-voltage hyst..:

Lin, Jun ; Monaghan, Scott ; Cherkaoui, Karim...
Microelectronic Engineering.  178 (2017)  - p. 204-208 , 2017
Link: https://doi.org/10.1016/..
 
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6

Structural and Electrical Investigation of MoS2Thin Films F..:

Duffy, Ray ; Foley, Patrick ; Filippone, Bruno...
ECS Journal of Solid State Science and Technology.  5 (2016)  11 - p. Q3016-Q3020 , 2016
Link: https://doi.org/10.1149/..
 
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7

Back-gated Nb-doped MoS2 junctionless field-effect-transist..:

Mirabelli, Gioele ; Schmidt, Michael ; Sheehan, Brendan...
AIP Advances.  6 (2016)  2 - p. 025323 , 2016
Link: https://doi.org/10.1063/..
 
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8

A study of capacitance–voltage hysteresis in the HfO2/InGaA..:

Lin, Jun ; Monaghan, Scott ; Cherkaoui, Karim...
Microelectronic Engineering.  147 (2015)  - p. 273-276 , 2015
Link: https://doi.org/10.1016/..
 
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9

An investigation of capacitance-voltage hysteresis in metal..:

Lin, Jun ; Gomeniuk, Yuri Y. ; Monaghan, Scott...
Journal of Applied Physics.  114 (2013)  14 - p. , 2013
Link: https://doi.org/10.1063/..
 
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10

Ge/Si p-n Diode Fabricated by Direct Wafer Bonding and Laye..:

Gity, Farzan ; Byun, Ki Yeol ; Lee, KoHsin...
ECS Transactions.  45 (2012)  6 - p. 131-139 , 2012
Link: https://doi.org/10.1149/..
 
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11

(Invited) Can Metal/Al2O3/In0.53Ga0.47As/InP MOSCAP Propert..:

Cherkaoui, Karim ; Djara, Vladimir ; O'Connor, Éamon...
ECS Transactions.  45 (2012)  3 - p. 79-88 , 2012
Link: https://doi.org/10.1149/..
 
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12

Characterization of germanium/silicon p–n junction fabricat..:

Gity, Farzan ; Yeol Byun, Ki ; Lee, Ko-Hsin...
Applied Physics Letters.  100 (2012)  9 - p. , 2012
Link: https://doi.org/10.1063/..
 
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13

Fabrication of HfO2 patterns by laser interference nanolith..:

Benedicto, Marcos ; Galiana, Beatriz ; Molina-Aldareguia, Jon M...
Nanoscale Research Letters.  6 (2011)  1 - p. , 2011
Link: https://doi.org/10.1186/..
 
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14

Capacitance-Voltage and Interface State Density Characteris..:

O'Connor, Eamon ; Djara, Vladimir ; Monaghan, Scott..
ECS Transactions.  35 (2011)  3 - p. 415-430 , 2011
Link: https://doi.org/10.1149/..
 
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15

(Invited) Investigation of High-κ/InxGa1-xAs Interfaces:

Cherkaoui, Karim ; O'Connor, Eamon ; Monaghan, Scott...
ECS Transactions.  28 (2010)  2 - p. 181-190 , 2010
Link: https://doi.org/10.1149/..
 
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