Chiam, S.Y.
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3

Interface Properties of Atomic Layer Deposited TiO2/Al2O3 F..:

Mukherjee, C. ; Das, T. ; Mahata, C....
ACS Applied Materials & Interfaces.  6 (2014)  5 - p. 3263-3274 , 2014
 
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Surface Passivation and Interface Properties of Bulk GaAs a..:

Dalapati, G. K. ; Chia, C. K. ; Tan, C. C....
ACS Applied Materials & Interfaces.  5 (2013)  3 - p. 949-957 , 2013
 
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Three-dimensional metamaterials fabricated using Proton Bea..:

Bettiol, A.A. ; Turaga, S.P. ; Yan, Y...
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.  306 (2013)  - p. 271-274 , 2013
 
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Investigating the stability of defects in MoO3 and its role..:

Chiam, S.Y. ; Dasgupta, B. ; Soler, D....
Solar Energy Materials and Solar Cells.  99 (2012)  - p. 197-203 , 2012
 
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An interface dipole predictive model for high-k dielectric/..:

Liu, Z. Q. ; Chim, W. K. ; Chiam, S. Y...
Journal of Materials Chemistry.  22 (2012)  34 - p. 17887 , 2012
 
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Role of surface stoichiometry on the interfacial electron b..:

Tao, Junguang ; Pan, J.S. ; Chiam, S.Y..
Materials Chemistry and Physics.  133 (2012)  2-3 - p. 871-875 , 2012
 
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Interfacial-layer-free growth of yttrium oxide on germanium..:

Liu, Z.Q. ; Chim, W.K. ; Chiam, S.Y....
Surface Science.  606 (2012)  21-22 - p. 1638-1642 , 2012
 
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