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Chiocchetta, F.
19
results:
Search for persons
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Format
Online (19)
Mediatypes
Articles (Online) (6)
Bookchapter (Online) (1)
OpenAccess-fulltext (12)
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?
1
Study of the influence of gate etching and passivation on c..:
Chiocchetta, F.
;
De Santi, C.
;
Rampazzo, F.
...
Microelectronics Reliability. 138 (2022) - p. 114735 , 2022
Link:
https://doi.org/10.1016/..
?
2
Isolation properties and failure mechanisms of vertical Pt ..:
Fregolent, M.
;
Boito, M.
;
Marcuzzi, A.
...
Microelectronics Reliability. 138 (2022) - p. 114644 , 2022
Link:
https://doi.org/10.1016/..
?
3
Review on the degradation of GaN-based lateral power transi..:
De Santi, C.
;
Buffolo, M.
;
Rossetto, I.
...
e-Prime - Advances in Electrical Engineering, Electronics and Energy. 1 (2021) - p. 100018 , 2021
Link:
https://doi.org/10.1016/..
?
4
Role of the AlGaN Cap Layer on the Trapping Behaviour of N-..:
, In:
2021 IEEE International Reliability Physics Symposium (IRPS)
,
Chiocchetta, F.
;
Calascione, C.
;
De Santi, C.
... - p. 1-2 , 2021
Link:
https://doi.org/10.1109/..
?
5
Charge trapping in 0.1 μm AlGaN/GaN RF HEMTs: Dependence on..:
Chiocchetta, F.
;
De Santi, C.
;
Rampazzo, F.
...
Microelectronics Reliability. 126 (2021) - p. 114259 , 2021
Link:
https://doi.org/10.1016/..
?
6
Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects o..:
Gao, Z.
;
Rampazzo, F.
;
Meneghini, M.
...
Microelectronics Reliability. 114 (2020) - p. 113905 , 2020
Link:
https://doi.org/10.1016/..
?
7
Characterization of charge trapping mechanisms in GaN verti..:
Ruzzarin, M.
;
De Santi, C.
;
Chiocchetta, F.
...
Microelectronics Reliability. 100-101 (2019) - p. 113488 , 2019
Link:
https://doi.org/10.1016/..
?
8
Degradation mechanism of 0.15 um AlGaN/GaN HEMTs: effects o..:
Gao, Z
;
Rampazzo, F
;
Meneghini, M
...
http://arxiv.org/abs/2107.08413. , 2021
Link:
http://arxiv.org/abs/210..
?
9
Characterization of charge trapping mechanisms in GaN verti..:
Ruzzarin M
;
De Santi C
;
Chiocchetta F
...
info:eu-repo/semantics/altIdentifier/wos/WOS:000503907900095. , 2019
Link:
http://hdl.handle.net/11..
?
10
Review on the degradation of GaN-based lateral power transi..:
C. De Santi
;
M. Buffolo
;
I. Rossetto
...
http://www.sciencedirect.com/science/article/pii/S2772671121000176. , 2021
Link:
https://doi.org/10.1016/..
?
11
Short term reliability and robustness of ultra-thin barrier..:
Gao, Zhan
;
Meneghini, Matteo
;
Harrouche, Kathia
...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.microrel.2021.114199. , 2021
Link:
https://hal.science/hal-..
?
12
Short term reliability and robustness of ultra-thin barrier..:
Gao, Zhan
;
Meneghini, Matteo
;
Harrouche, Kathia
...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.microrel.2021.114199. , 2021
Link:
https://hal.archives-ouv..
?
13
Short term reliability and robustness of ultra-thin barrier..:
Gao, Zhan
;
Meneghini, Matteo
;
Harrouche, Kathia
...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.microrel.2021.114199. , 2021
Link:
https://hal.science/hal-..
?
14
Short term reliability and robustness of ultra-thin barrier..:
Gao, Zhan
;
Meneghini, Matteo
;
Harrouche, Kathia
...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.microrel.2021.114199. , 2021
Link:
https://hal.science/hal-..
?
15
Short term reliability and robustness of ultra-thin barrier..:
Gao, Zhan
;
Meneghini, Matteo
;
Harrouche, Kathia
...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IPFA49335.2020.9260793. , 2020
Link:
https://hal.science/hal-..
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