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Chor, Eng-Fong
48
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Articles (Online) (45)
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?
1
Surface smoothing of floating gates in flash memory devices..:
Cha, Cher-Liang
;
Chor, Eng-Fong
;
Gong, Hao
...
Applied Physics Letters. 75 (1999) 3 - p. 355-357 , 1999
Link:
https://doi.org/10.1063/..
?
2
Enhancement of hot-carrier injection resistance for deep su..:
Cha, Cher-Liang
;
Tee, Kheng-Chok
;
Chor, Eng-Fong
...
Applied Physics Letters. 75 (1999) 26 - p. 4192-4194 , 1999
Link:
https://doi.org/10.1063/..
?
3
Heterojunction Bipolar Transistor with an Additional Minori..:
Eng Fong Chor, Eng Fong Chor
;
Cai Jun Peng, Cai Jun Peng
Japanese Journal of Applied Physics. 36 (1997) 11R - p. 6694 , 1997
Link:
https://doi.org/10.1143/..
?
4
Influence of PECVD deposited SiNxpassivation layer thicknes..:
Singh, Sarab Preet
;
Liu, Yi
;
Ngoo, Yi Jie
...
Journal of Physics D: Applied Physics. 48 (2015) 36 - p. 365104 , 2015
Link:
https://doi.org/10.1088/..
?
5
Annealing Pressure and Ambient Dependent RuOxSchottky Conta..:
Kyaw, Lwin Min
;
Liu, Yi
;
Lai, Mei Ying
...
ECS Journal of Solid State Science and Technology. 5 (2015) 2 - p. Q17-Q23 , 2015
Link:
https://doi.org/10.1149/..
?
6
Effects of Annealing Pressure and Ambient on Thermally Robu..:
Kyaw, Lwin Min
;
Liu, Yi
;
Lai, Mei Ying
...
ECS Transactions. 66 (2015) 1 - p. 249-257 , 2015
Link:
https://doi.org/10.1149/..
?
7
Silicon Nitride Thickness Dependent Electrical Properties o..:
Singh, Sarab Preet
;
Liu, Yi
;
Kyaw, Lwin Min
...
ECS Transactions. 61 (2014) 4 - p. 215-224 , 2014
Link:
https://doi.org/10.1149/..
?
8
Fabrication and Performance of InAlN/GaN-on-Si MOSHEMTs wit..:
Bera, Milan Kumar
;
Liu, Yi
;
Kyaw, Lwin Min
...
ECS Transactions. 61 (2014) 4 - p. 271-280 , 2014
Link:
https://doi.org/10.1149/..
?
9
Low Thermal Budget Au-Free Hf-Based Ohmic Contacts on InAlN..:
Liu, Yi
;
Kyaw, Lwin Min
;
Bera, Milan Kumar
...
ECS Transactions. 61 (2014) 4 - p. 319-327 , 2014
Link:
https://doi.org/10.1149/..
?
10
Gold-Free InAlN/GaN Schottky Gate HEMT On Si (111) Substrat..:
Kyaw, Lwin Min
;
Liu, Yi
;
Bera, Milan Kumar
...
ECS Transactions. 53 (2013) 2 - p. 75-83 , 2013
Link:
https://doi.org/10.1149/..
?
11
Thickness Dependent Electrical Characteristics of InAlN/GaN..:
Bera, Milan Kumar
;
Liu, Yi
;
Kyaw, Lwin Min
..
ECS Transactions. 53 (2013) 2 - p. 65-74 , 2013
Link:
https://doi.org/10.1149/..
?
12
Doping-free fabrication of n-type random network single-wal..:
Huang, Leihua
;
Chor, Eng Fong
;
Wu, Yihong
Physica E: Low-dimensional Systems and Nanostructures. 43 (2011) 7 - p. 1365-1370 , 2011
Link:
https://doi.org/10.1016/..
?
13
Fabrication of single-walled carbon nanotube Schottky diode..:
Huang, Leihua
;
Chor, Eng Fong
;
Wu, Yihong
.
Carbon. 48 (2010) 4 - p. 1298-1304 , 2010
Link:
https://doi.org/10.1016/..
?
14
Integration of Al Segregated NiSiGe/SiGe Source/Drain Conta..:
Sinha, Mantavya
;
Lee, Rinus T. P.
;
Devi, Sivasubramaniam Nandini
...
ECS Transactions. 19 (2009) 1 - p. 323-330 , 2009
Link:
https://doi.org/10.1149/..
?
15
Tuning the Schottky barrier height of nickel silicide on p-..:
Sinha, Mantavya
;
Chor, Eng Fong
;
Yeo, Yee-Chia
Applied Physics Letters. 92 (2008) 22 - p. , 2008
Link:
https://doi.org/10.1063/..
1-15
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