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Choudhury, A. N. M. Masum
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Articles (Online) (30)
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1
High-speed 1.3 μm InGaAs/GaAs metal-semiconductor-metal pho..:
Jagannath, C.
;
Choudhury, A. N. M. Masum
;
Negri, A.
..
Applied Physics Letters. 58 (1991) 4 - p. 325-327 , 1991
Link:
https://doi.org/10.1063/..
?
2
Cathodoluminescence observation of metallization-induced st..:
Yacobi, B. G.
;
Elman, B.
;
Jagannath, C.
..
Applied Physics Letters. 52 (1988) 21 - p. 1806-1808 , 1988
Link:
https://doi.org/10.1063/..
?
3
Improved activation of Mg+ and As+ dual implants in GaAs by..:
Masum Choudhury, A. N. M.
;
Armiento, C. A.
Applied Physics Letters. 50 (1987) 8 - p. 448-450 , 1987
Link:
https://doi.org/10.1063/..
?
4
A Simple Open‐Tube Zn‐Diffusion Technique for GaAs and AlGa..:
Choudhury, A. N. M. Masum
;
Oren, M.
;
Rothman, M. A.
.
Journal of The Electrochemical Society. 134 (1987) 10 - p. 2631-2634 , 1987
Link:
https://doi.org/10.1149/..
?
5
Interconnect Metallization Technique for GaAs Digital IC's:
Oren, Moshe
;
Choudhury, A. N. M. Masum
Journal of The Electrochemical Society. 134 (1987) 3 - p. 750-752 , 1987
Link:
https://doi.org/10.1149/..
?
6
Formation of p-type GaAs layers using Mg+ implantation and ..:
Masum Choudhury, A. N. M.
;
Armiento, C. A.
Applied Physics Letters. 49 (1986) 26 - p. 1787-1789 , 1986
Link:
https://doi.org/10.1063/..
?
7
Zn diffusion in GaAs obtained by a simple open-tube techniq..:
Oren, M.
;
Masum Choudhury, A. N. M.
Journal of Applied Physics. 60 (1986) 9 - p. 3379-3380 , 1986
Link:
https://doi.org/10.1063/..
?
8
VA-5 InGaAs/InP heterojunction bipolar transistors for digi..:
Masum Choudhury, A.N.M.
;
Tabatabaie-Alavi, K.
;
Vlcek, J.C.
..
IEEE Transactions on Electron Devices. 31 (1984) 12 - p. 1980-1980 , 1984
Link:
https://doi.org/10.1109/..
?
9
Electrical characteristics of Be-implanted GaAs diodes anne..:
Tabatabaie-Alavi, K.
;
Masum Choudhury, A. N. M.
;
Kanbe, H.
..
Applied Physics Letters. 43 (1983) 7 - p. 647-649 , 1983
Link:
https://doi.org/10.1063/..
?
10
Rapid thermal annealing of Be, Si, and Zn implanted GaAs us..:
Tabatabaie-Alavi, K.
;
Masum Choudhury, A. N. M.
;
Fonstad, C. G.
.
Applied Physics Letters. 43 (1983) 5 - p. 505-507 , 1983
Link:
https://doi.org/10.1063/..
?
11
Rapid thermal annealing of Se and Be implanted InP using an..:
Masum Choudhury, A. N. M.
;
Tabatabaie-Alavi, K.
;
Fonstad, C. G.
.
Applied Physics Letters. 43 (1983) 4 - p. 381-383 , 1983
Link:
https://doi.org/10.1063/..
?
12
IVA-6 ultra high intensity argon arc lamp annealing of ion ..:
Tabatabaie-Alavi, K.
;
Kanbe, H.
;
Masum Choudhury, A.N.M.
..
IEEE Transactions on Electron Devices. 30 (1983) 11 - p. 1589-1590 , 1983
Link:
https://doi.org/10.1109/..
?
13
Ion implantation of Si and Be in Al0.48In0.52As:
Choudhury, A. N. M. Masum
;
Rowe, W.
;
Tabatabaie-Alavi, K.
...
Journal of Applied Physics. 54 (1983) 8 - p. 4374-4377 , 1983
Link:
https://doi.org/10.1063/..
?
14
Multi-slice ultrasound image calibration of an intelligent ..:
Masum, M.A.
;
Pickering, M.R.
;
Lambert, A.J.
..
Journal of Biomechanics. 62 (2017) - p. 165-171 , 2017
Link:
https://doi.org/10.1016/..
?
15
Precision analysis of single‐element ultrasound sensor for ..:
Masum, M.A.
;
Pickering, M.R.
;
Lambert, A.J.
..
Electronics Letters. 50 (2014) 15 - p. 1047-1048 , 2014
Link:
https://doi.org/10.1049/..
1-15