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Choudhury, A. N. M. Masum
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1

High-speed 1.3 μm InGaAs/GaAs metal-semiconductor-metal pho..:

Jagannath, C. ; Choudhury, A. N. M. Masum ; Negri, A...
Applied Physics Letters.  58 (1991)  4 - p. 325-327 , 1991
Link: https://doi.org/10.1063/..
 
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2

Cathodoluminescence observation of metallization-induced st..:

Yacobi, B. G. ; Elman, B. ; Jagannath, C...
Applied Physics Letters.  52 (1988)  21 - p. 1806-1808 , 1988
Link: https://doi.org/10.1063/..
 
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3

Improved activation of Mg+ and As+ dual implants in GaAs by..:

Masum Choudhury, A. N. M. ; Armiento, C. A.
Applied Physics Letters.  50 (1987)  8 - p. 448-450 , 1987
Link: https://doi.org/10.1063/..
 
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4

A Simple Open‐Tube Zn‐Diffusion Technique for GaAs and AlGa..:

Choudhury, A. N. M. Masum ; Oren, M. ; Rothman, M. A..
Journal of The Electrochemical Society.  134 (1987)  10 - p. 2631-2634 , 1987
Link: https://doi.org/10.1149/..
 
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5

Interconnect Metallization Technique for GaAs Digital IC's:

Oren, Moshe ; Choudhury, A. N. M. Masum
Journal of The Electrochemical Society.  134 (1987)  3 - p. 750-752 , 1987
Link: https://doi.org/10.1149/..
 
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6

Formation of p-type GaAs layers using Mg+ implantation and ..:

Masum Choudhury, A. N. M. ; Armiento, C. A.
Applied Physics Letters.  49 (1986)  26 - p. 1787-1789 , 1986
Link: https://doi.org/10.1063/..
 
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7

Zn diffusion in GaAs obtained by a simple open-tube techniq..:

Oren, M. ; Masum Choudhury, A. N. M.
Journal of Applied Physics.  60 (1986)  9 - p. 3379-3380 , 1986
Link: https://doi.org/10.1063/..
 
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8

VA-5 InGaAs/InP heterojunction bipolar transistors for digi..:

Masum Choudhury, A.N.M. ; Tabatabaie-Alavi, K. ; Vlcek, J.C...
IEEE Transactions on Electron Devices.  31 (1984)  12 - p. 1980-1980 , 1984
Link: https://doi.org/10.1109/..
 
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9

Electrical characteristics of Be-implanted GaAs diodes anne..:

Tabatabaie-Alavi, K. ; Masum Choudhury, A. N. M. ; Kanbe, H...
Applied Physics Letters.  43 (1983)  7 - p. 647-649 , 1983
Link: https://doi.org/10.1063/..
 
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10

Rapid thermal annealing of Be, Si, and Zn implanted GaAs us..:

Tabatabaie-Alavi, K. ; Masum Choudhury, A. N. M. ; Fonstad, C. G..
Applied Physics Letters.  43 (1983)  5 - p. 505-507 , 1983
Link: https://doi.org/10.1063/..
 
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11

Rapid thermal annealing of Se and Be implanted InP using an..:

Masum Choudhury, A. N. M. ; Tabatabaie-Alavi, K. ; Fonstad, C. G..
Applied Physics Letters.  43 (1983)  4 - p. 381-383 , 1983
Link: https://doi.org/10.1063/..
 
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12

IVA-6 ultra high intensity argon arc lamp annealing of ion ..:

Tabatabaie-Alavi, K. ; Kanbe, H. ; Masum Choudhury, A.N.M...
IEEE Transactions on Electron Devices.  30 (1983)  11 - p. 1589-1590 , 1983
Link: https://doi.org/10.1109/..
 
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13

Ion implantation of Si and Be in Al0.48In0.52As:

Choudhury, A. N. M. Masum ; Rowe, W. ; Tabatabaie-Alavi, K....
Journal of Applied Physics.  54 (1983)  8 - p. 4374-4377 , 1983
Link: https://doi.org/10.1063/..
 
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14

Multi-slice ultrasound image calibration of an intelligent ..:

Masum, M.A. ; Pickering, M.R. ; Lambert, A.J...
Journal of Biomechanics.  62 (2017)  - p. 165-171 , 2017
Link: https://doi.org/10.1016/..
 
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15

Precision analysis of single‐element ultrasound sensor for ..:

Masum, M.A. ; Pickering, M.R. ; Lambert, A.J...
Electronics Letters.  50 (2014)  15 - p. 1047-1048 , 2014
Link: https://doi.org/10.1049/..
 
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