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2023 International Electron Devices Meeting (IEDM) ,
2
First Demonstration of Monolithic Self-aligned Heterogeneou..:
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2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ,
4
First Stacked Nanosheet FeFET Featuring Memory Window of 1...:
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2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ,
5
Extremely High-κ Hf0.2Zr0.8O2 Gate Stacks Integrated into G..:
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2022 International Electron Devices Meeting (IEDM) ,
7
First Demonstration of Monolithic 3D Self-aligned GeSi Chan..:
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2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ,
8
Nearly Ideal Subthreshold Swing and Delay Reduction of Stac..:
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2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ,
9
6 Stacked Ge0.95Si0.05 nGAAFETs without Parasitic Channels ..:
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2021 IEEE International Electron Devices Meeting (IEDM) ,
11