Chueh, Shee-Jier
11  results:
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1

Strain Evolution in SiGe Nanosheet Transistor Process Flow:

Chou, Hung-Chun ; Chou, Tao ; Chueh, Shee-Jier...
IEEE Transactions on Electron Devices.  71 (2024)  5 - p. 2907-2913 , 2024
 
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2

First Demonstration of Monolithic Self-aligned Heterogeneou..:

, In: 2023 International Electron Devices Meeting (IEDM),
Tu, Chien-Te ; Hsieh, Wan-Hsuan ; Chen, Yu-Rui... - p. 1-4 , 2023
 
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4

First Stacked Nanosheet FeFET Featuring Memory Window of 1...:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Chen, Yu-Rui ; Liu, Yi-Chun ; Zhao, Zefu... - p. 1-2 , 2023
 
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5

Extremely High-κ Hf0.2Zr0.8O2 Gate Stacks Integrated into G..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Liu, Yi-Chun ; Chen, Yu-Rui ; Chen, Yun-Wen... - p. 1-2 , 2023
 
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6

Highly Stacked GeSn Nanosheets by CVD Epitaxy and Highly Se..:

Huang, Bo-Wei ; Tsai, Chung-En ; Liu, Yi-Chun...
IEEE Transactions on Electron Devices.  69 (2022)  4 - p. 2130-2136 , 2022
 
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7

First Demonstration of Monolithic 3D Self-aligned GeSi Chan..:

, In: 2022 International Electron Devices Meeting (IEDM),
Tu, Chien-Te ; Liu, Yi-Chun ; Huang, Bo-Wei... - p. 20.3.1-20.3.4 , 2022
 
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8

Nearly Ideal Subthreshold Swing and Delay Reduction of Stac..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Tsai, Chung-En ; Cheng, Chun-Yi ; Huang, Bo-Wei... - p. 401-402 , 2022
 
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9

6 Stacked Ge0.95Si0.05 nGAAFETs without Parasitic Channels ..:

, In: 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA),
 
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11

Highly Stacked 8 $\mathbf{Ge}_{\boldsymbol{0.9}}\mathbf{Sn}..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Tsai, Chung-En ; Liu, Yi-Chun ; Tu, Chien-Te... - p. 26.4.1-26.4.4 , 2021
 
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