Ciabattini, Filippo
21  results:
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1

InP/GaInP Composite-Collector for Improved Breakdown Voltag..:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
 
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2

Record 35% Power-Added Efficiency at 170 GHz in 300-nm InP/..:

Hamzeloui, Sara ; Arabhavi, Akshay M. ; Ciabattini, Filippo...
IEEE Microwave and Wireless Technology Letters.  34 (2024)  8 - p. 1003-1006 , 2024
 
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3

94 GHz Two-Way-Combined Power Amplifiers with 14.2 dBm Peak..:

, In: 2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM),
 
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4

G-Band Load-Pull Characterization of High-Efficiency Emitte..:

, In: 2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM),
 
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5

Dual Gate HEMT: Compact Cascode for Low-Noise Amplification:

, In: 2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM),
 
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6

Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Cla..:

, In: 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS),
 
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7

Demonstration of 300-nm InP/GaInAsSb DHBT MMIC Technology i..:

, In: 2022 17th European Microwave Integrated Circuits Conference (EuMIC),
 
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8

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter..:

Arabhavi, Akshay M. ; Ciabattini, Filippo ; Hamzeloui, Sara...
IEEE Transactions on Electron Devices.  69 (2022)  4 - p. 2122-2129 , 2022
 
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12

High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14..:

Hamzeloui, Sara ; Arabhavi, Akshay M ; Ciabattini, Filippo...
info:eu-repo/semantics/altIdentifier/doi/10.1109/jmw.2022.3202854.  , 2022
 
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13

InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter..:

Arabhavi, Akshay M ; Ciabattini, Filippo ; Hamzeloui, Sara...
info:eu-repo/semantics/altIdentifier/doi/10.1109/TED.2021.3138379.  , 2022
 
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