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Clement Wann, H.
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1

MOSFET carrier mobility model based on gate oxide thickness..:

Chen, Kai ; Clement Wann, H. ; Dunster, Jon...
Solid-State Electronics.  39 (1996)  10 - p. 1515-1518 , 1996
Link: https://doi.org/10.1016/..
 
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2

Comparative analysis of hole transport in compressively str..:

Agrawal, Ashish ; Barth, Michael ; Madan, Himanshu...
Applied Physics Letters.  105 (2014)  5 - p. , 2014
Link: https://doi.org/10.1063/..
 
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3

Experimental Demonstration of (111)-Oriented GaAs Metal–Oxi..:

Han, Tsung-Yu ; Luo, Guang-Li ; Cheng, Chao-Ching...
ECS Journal of Solid State Science and Technology.  3 (2014)  4 - p. P86-P90 , 2014
Link: https://doi.org/10.1149/..
 
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4

Band alignment study of lattice-matched InAlP and Ge using ..:

Owen, Man Hon Samuel ; Guo, Cheng ; Chen, Shu-Han...
Applied Physics Letters.  103 (2013)  3 - p. , 2013
Link: https://doi.org/10.1063/..
 
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5

Optical Studies of GaAs Nanowires Grown on Trenched Si(001)..:

Lee, Ling ; Chien, Kun-Feng ; Fan, Wen-Chung...
Japanese Journal of Applied Physics.  51 (2012)  6S - p. 06FG15 , 2012
Link: https://doi.org/10.7567/..
 
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6

Nearly Dislocation-free Ge/Si Heterostructures by Using Nan..:

Luo, Guang-Li ; Ko, Chih-Hsin ; Wann, Clement H....
Physics Procedia.  25 (2012)  - p. 105-109 , 2012
Link: https://doi.org/10.1016/..
 
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7

Improvement of defect reduction in semi-polar GaN grown on ..:

Lee, Ling ; Chien, Kun-Feng ; Chou, Wu-Ching...
CrystEngComm.  14 (2012)  13 - p. 4486 , 2012
Link: https://doi.org/10.1039/..
 
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8

Optical Studies of GaAs Nanowires Grown on Trenched Si(001)..:

Lee, Ling ; Chien, Kun-Feng ; Fan, Wen-Chung...
Japanese Journal of Applied Physics.  51 (2012)  6S - p. 06FG15 , 2012
Link: https://doi.org/10.1143/..
 
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9

Influences of surface reconstruction on the atomic-layer-de..:

Lin, Hau-Yu ; Wu, San-Lein ; Cheng, Chao-Ching...
Applied Physics Letters.  98 (2011)  12 - p. , 2011
Link: https://doi.org/10.1063/..
 
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10

Single Crystalline GaN Epitaxial Layer Prepared on Nano-Pat..:

Huang, C. C. ; Chang, S. J. ; Kuo, C. H....
Journal of The Electrochemical Society.  158 (2011)  6 - p. H626-H629 , 2011
Link: https://doi.org/10.1149/..
 
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11

In[sub 0.7]Ga[sub 0.3]As Channel n-MOSFET with Self-Aligned..:

Zhang, Xingui ; Guo, Huaxin ; Gong, Xiao...
Electrochemical and Solid-State Letters.  14 (2011)  2 - p. H60 , 2011
Link: https://doi.org/10.1149/..
 
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12

Self-Aligned Gate-First In[sub 0.7]Ga[sub 0.3]As n-MOSFETs ..:

Gong, Xiao ; Ivana ; Chin, Hock-Chun...
Electrochemical and Solid-State Letters.  14 (2011)  3 - p. H117 , 2011
Link: https://doi.org/10.1149/..
 
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13

Reduction of Off-State Leakage Current in In0.7Ga0.3As Chan..:

Zhang, Xingui ; Guo, Huaxin ; Lin, Hau-Yu...
Electrochemical and Solid-State Letters.  14 (2011)  5 - p. H212 , 2011
Link: https://doi.org/10.1149/..
 
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14

III–V MOSFETs with a new self-aligned contact:

, In: 2010 Symposium on VLSI Technology,
Zhang, Xingui ; Guo, Huaxin ; Ko, Chih-Hsin... - p. 233-234 , 2010
Link: https://doi.org/10.1109/..
 
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15

High crystalline quality Ge grown by MOCVD inside narrow sh..:

Vellianitis, G. ; van Dal, M.J.H. ; Duriez, B....
Journal of Crystal Growth.  383 (2013)  - p. 9-11 , 2013
Link: https://doi.org/10.1016/..
 
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