E-LIB Suche - Ergebnisse für: Clerc, R.

1

On the minimum thickness of doped electron/hole transport l..:

Oussalah, D. ; Clerc, R. ; Baylet, J....
Journal of Applied Physics. 130 (2021) 12 - p. , 2021

2

Lowering the Dark Count Rate of SPAD Implemented in CMOS FD..:

, In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS),

de Albuquerque, T. Chaves ; Issartel, D. ; Clerc, R.... - p. 1-4 , 2019

Link: https://doi.org/10.1109/..

3

On the front and back side quantum efficiency differences i..:

Bouthinon, B. ; Clerc, R. ; Verilhac, J. M....
Journal of Applied Physics. 123 (2018) 12 - p. , 2018

Link: https://doi.org/10.1063/..

4

Evidence of band bending induced by hole trapping at MAPbI3..:

Chen, Y.-F. ; Tsai, Y.-T. ; Bassani, D. M....
Journal of Materials Chemistry A. 4 (2016) 44 - p. 17529-17536 , 2016

Link: https://doi.org/10.1039/..

5

Impact of quantum effects on the short channel effects of I..:

Dutta, T. ; Rafhay, Q. ; Clerc, R....
Solid-State Electronics. 88 (2013) - p. 43-48 , 2013

Link: https://doi.org/10.1016/..

6

Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devic..:

Nier, O. ; Rideau, D. ; Niquet, Y. M....
Journal of Computational Electronics. 12 (2013) 4 - p. 675-684 , 2013

Link: https://doi.org/10.1007/..

7

Impact of carrier heating on backscattering in inversion la..:

Clerc, R. ; Palestri, P. ; Selmi, L..
Journal of Applied Physics. 110 (2011) 10 - p. , 2011

Link: https://doi.org/10.1063/..

8

Characterization and 3D TCAD simulation of NOR-type flash n..:

Zaka, A. ; Singer, J. ; Dornel, E....
Solid-State Electronics. 63 (2011) 1 - p. 158-162 , 2011

Link: https://doi.org/10.1016/..

9

Analytical modeling of organic solar cells and photodiodes:

Altazin, S. ; Clerc, R. ; Gwoziecki, R....
Applied Physics Letters. 99 (2011) 14 - p. , 2011

Link: https://doi.org/10.1063/..

10

HfO2-based gate stacks transport mechanisms and parameter e..:

Coignus, J. ; Leroux, C. ; Clerc, R....
Solid-State Electronics. 54 (2010) 9 - p. 972-978 , 2010

Link: https://doi.org/10.1016/..

11

Performance and analytical modeling of Metal–Insulator-Meta..:

Ferrier, M. ; Zhang, D. ; Griffin, P....
Solid-State Electronics. 54 (2010) 12 - p. 1525-1531 , 2010

Link: https://doi.org/10.1016/..

12

A compact drain current model of short-channel cylindrical ..:

Tsormpatzoglou, A ; Tassis, D H ; Dimitriadis, C A...
Semiconductor Science and Technology. 24 (2009) 7 - p. 075017 , 2009

Link: https://doi.org/10.1088/..

13

NANOSIL network of excellence—silicon-based nanostructures ..:

Balestra, F. ; Parker, E. ; Leadley, D....
Materials Science in Semiconductor Processing. 11 (2008) 5-6 - p. 148-159 , 2008

Link: https://doi.org/10.1016/..

14

Ultra-thin fully-depleted SOI MOSFETs: Special charge prope..:

Eminente, S. ; Cristoloveanu, S. ; Clerc, R...
Solid-State Electronics. 51 (2007) 2 - p. 239-244 , 2007

Link: https://doi.org/10.1016/..

15

Modeling and optimization of series resistance of planar MI..:

Bajolet, A. ; Clerc, R. ; Pananakakis, G....
Solid-State Electronics. 50 (2006) 7-8 - p. 1244-1251 , 2006

Link: https://doi.org/10.1016/..