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Collaert, N.
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1

DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
O'Sullivan, B. J. ; Alian, A. ; Sibaja-Hernandez, A.... - p. 1-9 , 2024
Link: https://doi.org/10.1109/..
 
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2

High Performance mm Wave AlN/GaN MISHEMTs on 200 mm Si Subs..:

, In: 2023 International Electron Devices Meeting (IEDM),
Yadav, S. ; Alian, A. ; ElKashlan, R.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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3

Charge Movement in Back Barrier Induced Time-Dependent On-S..:

, In: 2023 International Electron Devices Meeting (IEDM),
Yu, Hao ; Fang, J. ; Vermeersch, B.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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4

(Why do we need) Wireless Heterogeneous Integration (anyway..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Peeters, M. ; Sinha, S. ; Sun, X.... - p. 256-257 , 2022
Link: https://doi.org/10.1109/..
 
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5

III-V/III-N technologies for next generation high-capacity ..:

, In: 2022 International Electron Devices Meeting (IEDM),
Collaert, N. ; Alian, A. ; Banerjee, A.... - p. 11.5.1-11.5.4 , 2022
Link: https://doi.org/10.1109/..
 
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6

Understanding the factors affecting contact resistance in n..:

Ramesh, S. ; Ivanov, Ts. ; Sibaja-Hernandez, A....
Journal of Applied Physics.  132 (2022)  2 - p. , 2022
Link: https://doi.org/10.1063/..
 
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7

Cost-effective RF interposer platform on low-resistivity Si..:

, In: 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC),
Sun, X. ; Slabbekoorn, J. ; Sinha, S.... - p. 7-11 , 2022
Link: https://doi.org/10.1109/..
 
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8

Comprehensive Investigations of HBM ESD Robustness for GaN-..:

, In: 2022 International Electron Devices Meeting (IEDM),
Abhinay, S. ; Wu, W.-M. ; Shih, C.-A.... - p. 30.7.1-30.7.4 , 2022
Link: https://doi.org/10.1109/..
 
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9

Thermal Modelling of GaN & InP RF Devices with Intrinsic Ac..:

, In: 2022 International Electron Devices Meeting (IEDM),
Vermeersch, B. ; Rodriguez, R. ; Sibaja-Hernandez, A.... - p. 15.3.1-15.3.4 , 2022
Link: https://doi.org/10.1109/..
 
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10

III-V on a Si platform for the next generations of communic..:

, In: 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Parvais, B. ; Vais, A. ; Yadav, S.... - p. 250-252 , 2022
Link: https://doi.org/10.1109/..
 
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11

III-V HBTs on 300 mm Si substrates using merged nano-ridges..:

, In: ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC),
Vais, A. ; Yadav, S. ; Mols, Y.... - p. 261-264 , 2022
Link: https://doi.org/10.1109/..
 
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12

Back Barrier Trapping Induced Resistance Dispersion in GaN ..:

, In: 2022 International Electron Devices Meeting (IEDM),
Yu, Hao ; Parvais, B. ; Peralagu, U.... - p. 30.6.1-30.6.4 , 2022
Link: https://doi.org/10.1109/..
 
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13

The Impact of Width Downscaling on the High-Frequency Chara..:

Huang, P. ; Luc, Q. H. ; Sibaja-Hernandez, A....
IEEE Journal of the Electron Devices Society.  10 (2022)  - p. 854-859 , 2022
Link: https://doi.org/10.1109/..
 
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14

On the impact of buffer and GaN-channel thickness on curren..:

, In: 2021 IEEE International Reliability Physics Symposium (IRPS),
Putcha, V. ; Cheng, L. ; Alian, A.... - p. 1-8 , 2021
Link: https://doi.org/10.1109/..
 
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15

Gate dielectric material influence on DC behavior of MO(I)S..:

Agopian, P.G.D. ; Carmo, G.J. ; Martino, J.A....
Solid-State Electronics.  185 (2021)  - p. 108091 , 2021
Link: https://doi.org/10.1016/..
 
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