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Collazo, Ramón
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1

Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Impla..:

Stein, Shane R. ; Khachariya, Dolar ; Mecouch, Will...
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1494-1501 , 2024
Link: https://doi.org/10.1109/..
 
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2

High conductivity in Ge-doped AlN achieved by a non-equilib..:

Bagheri, Pegah ; Quiñones-Garcia, Cristyan ; Khachariya, Dolar...
Applied Physics Letters.  122 (2023)  14 - p. , 2023
Link: https://doi.org/10.1063/..
 
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3

High p-conductivity in AlGaN enabled by polarization field ..:

Rathkanthiwar, Shashwat ; Reddy, Pramod ; Moody, Baxter...
Applied Physics Letters.  122 (2023)  15 - p. , 2023
Link: https://doi.org/10.1063/..
 
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4

Chemical Vapor Deposition of Monolayer MoS2 on Chemomechani..:

Sengupta, Rohan ; Vaidya, Shipra ; Szymanski, Dennis...
ACS Applied Nano Materials.  6 (2023)  7 - p. 5081-5086 , 2023
Link: https://doi.org/10.1021/..
 
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5

Schottky contacts on ultra-high-pressure-annealed GaN with ..:

Stein, Shane R. ; Khachariya, Dolar ; Mita, Seiji...
Applied Physics Express.  16 (2023)  3 - p. 031006 , 2023
Link: https://doi.org/10.35848..
 
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6

High conductivity and low activation energy in p-type AlGaN:

Rathkanthiwar, Shashwat ; Bagheri, Pegah ; Khachariya, Dolar...
Applied Physics Letters.  122 (2023)  9 - p. , 2023
Link: https://doi.org/10.1063/..
 
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7

Anderson transition in compositionally graded p-AlGaN:

Rathkanthiwar, Shashwat ; Reddy, Pramod ; Quiñones, Cristyan E....
Journal of Applied Physics.  134 (2023)  19 - p. , 2023
Link: https://doi.org/10.1063/..
 
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8

Performance and reliability of state-of-the-art commercial ..:

Loveless, James ; Kirste, Ronny ; Moody, Baxter...
Solid-State Electronics.  209 (2023)  - p. 108775 , 2023
Link: https://doi.org/10.1016/..
 
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9

Point-defect management in homoepitaxially grown Si-doped G..:

Rathkanthiwar, Shashwat ; Bagheri, Pegah ; Khachariya, Dolar...
Applied Physics Express.  15 (2022)  5 - p. 051003 , 2022
Link: https://doi.org/10.35848..
 
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10

Synchrotron X-Ray Topography Characterization of Power Elec..:

Liu, Yafei ; Peng, Hong Yu ; Chen, Ze Yu...
Materials Science Forum.  1062 (2022)  - p. 351-355 , 2022
Link: https://doi.org/10.4028/..
 
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11

Schottky contacts to N-polar GaN with SiN interlayer for el..:

Khachariya, Dolar ; Szymanski, Dennis ; Reddy, Pramod...
Applied Physics Letters.  120 (2022)  17 - p. , 2022
Link: https://doi.org/10.1063/..
 
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12

Low resistivity, p-type, N-Polar GaN achieved by chemical p..:

Rathkanthiwar, Shashwat ; Szymanski, Dennis ; Khachariya, Dolar...
Applied Physics Express.  15 (2022)  8 - p. 081004 , 2022
Link: https://doi.org/10.35848..
 
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13

GaN lateral polar junction arrays with 3D control of doping..:

Szymanski, Dennis ; Khachariya, Dolar ; Eldred, Tim B....
Journal of Applied Physics.  131 (2022)  1 - p. , 2022
Link: https://doi.org/10.1063/..
 
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14

High electron mobility in AlN:Si by point and extended defe..:

Bagheri, Pegah ; Quiñones-Garcia, Cristyan ; Khachariya, Dolar...
Journal of Applied Physics.  132 (2022)  18 - p. , 2022
Link: https://doi.org/10.1063/..
 
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15

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0..:

Khachariya, Dolar ; Mita, Seiji ; Reddy, Pramod...
Applied Physics Letters.  120 (2022)  17 - p. , 2022
Link: https://doi.org/10.1063/..
 
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