E-LIB Suche - Ergebnisse für: Colombeau, Benjamin

1

Gate-All-Around SRAM: Performance Investigation and Optimiz..:

, In: 2024 IEEE International Memory Workshop (IMW),

Vyas, Pratik B. ; Pal, Ashish ; Costrini, Gregory... - p. 1-4 , 2024

2

Obituary - Dr. Fuccio Cristiano:

Alberti, Alessandra ; Colombeau, Benjamin ; La Magna, Antonino...
Materials Science in Semiconductor Processing. 175 (2024) - p. 108270 , 2024

Link: https://doi.org/10.1016/..

3

Materials to System Co-optimization (MSCO™) for SRAM and it..:

, In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),

Vyas, Pratik B. ; Pal, Ashish ; Costrini, Gregory... - p. 53-56 , 2023

Link: https://doi.org/10.23919..

4

Impact of MOL/BEOL Air-Spacer on Parasitic Capacitance and ..:

, In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),

Pal, Ashish ; Natarajan, Sanjay ; Ayyagari, Buvna... - p. 1-4 , 2019

Link: https://doi.org/10.1109/..

5

Damage accumulation during cryogenic and room temperature i..:

Payet, Anthony ; Luce, Flavia Piegas ; Curfs, Caroline...
Materials Science in Semiconductor Processing. 42 (2016) - p. 247-250 , 2016

Link: https://doi.org/10.1016/..

6

Influence of device architecture on junction leakage in low..:

Sklenard, Benoit ; Batude, Perrine ; Rafhay, Quentin...
Solid-State Electronics. 88 (2013) - p. 9-14 , 2013

Link: https://doi.org/10.1016/..

7

Advanced CMOS devices: Challenges and implant solutions:

Colombeau, Benjamin ; Guo, Baonian ; Gossmann, Hans‐Joachim...
physica status solidi (a). 211 (2013) 1 - p. 101-108 , 2013

Link: https://doi.org/10.1002/..

8

Physical understanding of cryogenic implant benefits for el..:

Adeni Khaja, Fareen ; Colombeau, Benjamin ; Thanigaivelan, Thirumal..
Applied Physics Letters. 100 (2012) 11 - p. , 2012

Link: https://doi.org/10.1063/..

9

Defect Engineering for Ultrashallow Junctions using Surface:

Seebauer, Edmund ; Kwok, Charlotte ; Vaidyanathan, Ramakrishnan...
ECS Transactions. 13 (2008) 1 - p. 55-62 , 2008

Link: https://doi.org/10.1149/..

10

Defect engineering by surface chemical state in boron-doped..:

Yeong, S. H. ; Srinivasan, M. P. ; Colombeau, Benjamin...
Applied Physics Letters. 91 (2007) 10 - p. , 2007

Link: https://doi.org/10.1063/..

11

Defect Engineering for Ultrashallow Junctions using Surface:

Seebauer, Edmund G. ; Yeong, Sai Hooi ; Srinivasan, M P...
ECS Transactions. 6 (2007) 1 - p. 365-371 , 2007

Link: https://doi.org/10.1149/..

12

E-MRS 2005/Symposium D: Materials science and device issues..:

Pelaz, Lourdes ; Duffy, Ray ; Cristiano, Fuccio..
Materials Science and Engineering: B. 124-125 (2005) - p. 1-2 , 2005

Link: https://doi.org/10.1016/..

13

A physically based model for the spatial and temporal evolu..:

Ortiz, Christophe J. ; Pichler, Peter ; Fühner, Tim...
Journal of Applied Physics. 96 (2004) 9 - p. 4866-4877 , 2004

Link: https://doi.org/10.1063/..

14

Thermal evolution of extended defects in implanted Si:

Claverie, Alain ; Colombeau, Benjamin ; Ben Assayag, Gérard...
Materials Science in Semiconductor Processing. 3 (2000) 4 - p. 269-277 , 2000

Link: https://doi.org/10.1016/..

15

(Invited) Issues with n-type Dopants in Germanium:

Skarlatos, Dimitrios ; Ioannou-Sougleridis, Vassilios ; Barozzi, Mario...
ECS Transactions. 86 (2018) 10 - p. 51-58 , 2018

Link: https://doi.org/10.1149/..