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Constant, Aurore
23  results:
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1

On the Dynamic RON, Vertical Leakage and Capacitance Behavi..:

Cioni, Marcello ; Chini, Alessandro ; Zagni, Nicolò...
IEEE Electron Device Letters.  45 (2024)  8 - p. 1437-1440 , 2024
Link: https://doi.org/10.1109/..
 
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2

Study of 100V GaN power devices in dynamic condition and Ga..:

Giorgino, Giovanni ; Cioni, Marcello ; Miccoli, Cristina...
e-Prime - Advances in Electrical Engineering, Electronics and Energy.  6 (2023)  - p. 100338 , 2023
Link: https://doi.org/10.1016/..
 
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3

Selective wet etching and hydrolysis of polycrystalline AlN..:

Constant, Aurore ; Coppens, Peter ; Baele, Joris...
Materials Science in Semiconductor Processing.  137 (2022)  - p. 106157 , 2022
Link: https://doi.org/10.1016/..
 
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4

The role of AlGaN/GaN heterostructure properties in barrier..:

Constant, Aurore ; Claeys, Elke ; Baele, Joris..
Materials Science in Semiconductor Processing.  129 (2021)  - p. 105806 , 2021
Link: https://doi.org/10.1016/..
 
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5

(Invited) Intrinsic Reliability Assessment of 650V Rated Al..:

Moens, Peter ; Banerjee, Abhishek ; Constant, Aurore...
ECS Transactions.  72 (2016)  4 - p. 65-76 , 2016
Link: https://doi.org/10.1149/..
 
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6

Proton and Electron Irradiation in Oxynitrided Gate 4H-SiC ..:

Florentin, Matthieu ; Alexandru, Mihaela ; Constant, Aurore...
Materials Science Forum.  821-823 (2015)  - p. 667-672 , 2015
Link: https://doi.org/10.4028/..
 
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7

10 MeV Proton Irradiation Effect on 4H-SiC nMOSFET Electric..:

Florentin, Matthieu ; Alexandru, Mihaela ; Constant, Aurore..
Materials Science Forum.  806 (2014)  - p. 121-125 , 2014
Link: https://doi.org/10.4028/..
 
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8

Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate O..:

Florentin, Matthieu ; Alexandru, Mihaela ; Constant, Aurore...
Materials Science Forum.  778-780 (2014)  - p. 525-528 , 2014
Link: https://doi.org/10.4028/..
 
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9

Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State B..:

Tadjer, Marko J. ; Constant, Aurore ; Godignon, Philippe...
Materials Science Forum.  740-742 (2013)  - p. 553-556 , 2013
Link: https://doi.org/10.4028/..
 
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10

Characterization of Nitrided Gate Oxide Formed by RTP for S..:

Constant, Aurore ; Godignon, Philippe
Advanced Materials Research.  324 (2011)  - p. 221-224 , 2011
Link: https://doi.org/10.4028/..
 
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11

Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication:

Constant, Aurore ; Camara, Nicolas ; Montserrat, Josep...
Materials Science Forum.  679-680 (2011)  - p. 500-503 , 2011
Link: https://doi.org/10.4028/..
 
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12

Nitrided Gate Oxide Formed by Rapid Thermal Processing for ..:

Constant, Aurore ; Godignon, Philippe ; Montserrat, Josep.
ECS Transactions.  35 (2011)  6 - p. 157-164 , 2011
Link: https://doi.org/10.1149/..
 
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13

Rapid and Efficient Oxidation Process of SiC by In Situ Mul..:

Constant, Aurore ; Camara, Nicolas ; Godignon, Philippe...
Materials Science Forum.  645-648 (2010)  - p. 817-820 , 2010
Link: https://doi.org/10.4028/..
 
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14

Recent advances in GaN power devices development at CEA-LET:

Gwoziecki, Romain ; Buckley, Julien ; Le Royer, Cyrille...
cea-03870230.  , 2022
Link: https://cea.hal.science/..
 
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15

Recent advances in GaN power devices development at CEA-LET:

Gwoziecki, Romain ; Buckley, Julien ; Le Royer, Cyrille...
cea-03870230.  , 2022
Link: https://hal-cea.archives..
 
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