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Coquand, R.
25
results:
Search for persons
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Format
Online (25)
Mediatypes
Articles (Online) (8)
Bookchapter (Online) (1)
OpenAccess-fulltext (16)
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?
1
Top-down fabrication and electrical characterization of Si ..:
Barraud, S
;
Previtali, B
;
Lapras, V
...
Semiconductor Science and Technology. 34 (2019) 7 - p. 074001 , 2019
Link:
https://doi.org/10.1088/..
?
2
Imaging, Modeling and Engineering of Strain in Gate-All-Aro..:
, In:
2019 IEEE International Electron Devices Meeting (IEDM)
,
Reboh, S.
;
Boureau, V.
;
Yamashita, T.
... - p. 11.5.1-11.5.4 , 2019
Link:
https://doi.org/10.1109/..
?
3
Strain, stress, and mechanical relaxation in fin-patterned ..:
Reboh, S.
;
Coquand, R.
;
Barraud, S.
...
Applied Physics Letters. 112 (2018) 5 - p. , 2018
Link:
https://doi.org/10.1063/..
?
4
Scaling of high-κ/metal-gate TriGate SOI nanowire transisto..:
Coquand, R.
;
Barraud, S.
;
Cassé, M.
...
Solid-State Electronics. 88 (2013) - p. 32-36 , 2013
Link:
https://doi.org/10.1016/..
?
5
Defect analysis of a silicon nanowire transistor by X-ray e..:
Lepinay, K
;
Lorut, F
;
Pofelski, A
...
Journal of Physics: Conference Series. 471 (2013) - p. 012027 , 2013
Link:
https://doi.org/10.1088/..
?
6
Study of carrier transport in strained and unstrained SOI t..:
Koyama, M.
;
Cassé, M.
;
Coquand, R.
...
Solid-State Electronics. 84 (2013) - p. 46-52 , 2013
Link:
https://doi.org/10.1016/..
?
7
Scaling of Trigate nanowire (NW) MOSFETs to sub-7nm width: ..:
Deshpande, V.
;
Barraud, S.
;
Jehl, X.
...
Solid-State Electronics. 84 (2013) - p. 179-184 , 2013
Link:
https://doi.org/10.1016/..
?
8
Comparative study of circuit perspectives for multi-gate st..:
Lacord, J.
;
Huguenin, J.-L.
;
Monfray, S.
...
Solid-State Electronics. 74 (2012) - p. 25-31 , 2012
Link:
https://doi.org/10.1016/..
?
9
Vertically Stacked-NanoWires MOSFETs in a Replacement Metal..:
Barraud, S
;
Lapras, V
;
Samson, M
...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IEDM.2016.7838441. , 2016
Link:
https://hal-cea.archives..
?
10
Vertically Stacked-NanoWires MOSFETs in a Replacement Metal..:
Barraud, S
;
Lapras, V
;
Samson, M
...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IEDM.2016.7838441. , 2016
Link:
https://hal-cea.archives..
?
11
NSP: Physical compact model for stacked-planar and vertical..:
Rozeau, O
;
Martinie, S
;
Poiroux, T
...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IEDM.2016.7838369. , 2016
Link:
https://hal-cea.archives..
?
12
Vertically Stacked-NanoWires MOSFETs in a Replacement Metal..:
Barraud, S
;
Lapras, V
;
Samson, M
...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IEDM.2016.7838441. , 2016
Link:
https://hal-cea.archives..
?
13
Vertically Stacked-NanoWires MOSFETs in a Replacement Metal..:
Barraud, S
;
Lapras, V
;
Samson, M
...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IEDM.2016.7838441. , 2016
Link:
https://hal-cea.archives..
?
14
NSP: Physical compact model for stacked-planar and vertical..:
Rozeau, O
;
Martinie, S
;
Poiroux, T
...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IEDM.2016.7838369. , 2016
Link:
https://hal-cea.archives..
?
15
Vertically Stacked-NanoWires MOSFETs in a Replacement Metal..:
Barraud, S
;
Lapras, V
;
Samson, M
...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IEDM.2016.7838441. , 2016
Link:
https://hal-cea.archives..
1-15
