E-LIB Suche - Ergebnisse für: Cordier, Y.

1

Robust Al0.23Ga0.77N channel HFETs on bulk AlN for high vol..:

Mehta, J. ; Abid, I. ; Elwaradi, R...
e-Prime - Advances in Electrical Engineering, Electronics and Energy. 5 (2023) - p. 100263 , 2023

Link: https://doi.org/10.1016/..

2

Atomic resolution interface structure and vertical current ..:

Giannazzo, F. ; Panasci, S.E. ; Schilirò, E....
Applied Surface Science. 631 (2023) - p. 157513 , 2023

Link: https://doi.org/10.1016/..

3

High Al-content AlGaN channel high electron mobility transi..:

Mehta, J. ; Abid, I. ; Bassaler, J....
e-Prime - Advances in Electrical Engineering, Electronics and Energy. 3 (2023) - p. 100114 , 2023

Link: https://doi.org/10.1016/..

4

High Breakdown Voltage GaN Schottky Diodes for THz Frequenc..:

Di Gioia, G. ; Frayssinet, E. ; Samnouni, M....
Journal of Electronic Materials. 52 (2023) 8 - p. 5249-5255 , 2023

Link: https://doi.org/10.1007/..

5

Epitaxial growth of AlGaN/GaN HEMTs on patterned Si substra..:

Elwaradi, R. ; Frayssinet, E. ; Chenot, S....
Microelectronic Engineering. 277 (2023) - p. 112017 , 2023

Link: https://doi.org/10.1016/..

6

Comprehensive model for ideal reverse leakage current compo..:

Orfao, B. ; Di Gioia, G. ; Vasallo, B. G....
Journal of Applied Physics. 132 (2022) 4 - p. , 2022

Link: https://doi.org/10.1063/..

7

Publisher's Note: "A 5.7 THz GaN/AlGaN quantum cascade dete..:

Quach, P. ; Jollivet, A. ; Babichev, A....
Applied Physics Letters. 120 (2022) 19 - p. , 2022

Link: https://doi.org/10.1063/..

8

Transport characteristics of AlGaN/GaN structures for ampli..:

Kaur, Harpreet ; Sharma, Rajesh ; Laurent, T....
Applied Physics A. 128 (2022) 2 - p. , 2022

Link: https://doi.org/10.1007/..

9

A 5.7 THz GaN/AlGaN quantum cascade detector based on polar..:

Quach, P. ; Jollivet, A. ; Babichev, A....
Applied Physics Letters. 120 (2022) 17 - p. , 2022

Link: https://doi.org/10.1063/..

10

Towards high buffer breakdown field and high temperature st..:

, In: 2022 Compound Semiconductor Week (CSW),

Mehta, J. ; Abid, I. ; Bassaler, J.... - p. 1-2 , 2022

Link: https://doi.org/10.1109/..

11

Terahertz intersubband absorption of GaN/AlGaN step quantum..:

Jollivet, A. ; Tchernycheva, M. ; Trinité, V....
Applied Physics Letters. 115 (2019) 26 - p. , 2019

Link: https://doi.org/10.1063/..

12

High temperature annealing and CVD growth of few-layer grap..:

Dagher, R. ; Matta, S. ; Parret, R....
physica status solidi (a). 214 (2017) 4 - p. 1600436 , 2017

Link: https://doi.org/10.1002/..

13

Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN hig..:

Latrach, S. ; Frayssinet, E. ; Defrance, N....
Current Applied Physics. 17 (2017) 12 - p. 1601-1608 , 2017

Link: https://doi.org/10.1016/..

14

Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs:

Sánchez-Martín, H ; García-Pérez, Ó ; Pérez, S...
Semiconductor Science and Technology. 32 (2017) 3 - p. 035011 , 2017

Link: https://doi.org/10.1088/..

15

Active metasurfaces for broadband terahertz detection at ro..:

, In: 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz),

Mendez Lara, J.G. ; Genevet, P. ; Cordier, Y.... - p. 1-2 , 2017

Link: https://doi.org/10.1109/..