Cosnier, T.
22  results:
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1

1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineer..:

Kumar, S. ; Geens, K. ; Vohra, A....
IEEE Electron Device Letters.  45 (2024)  4 - p. 657-660 , 2024
 
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3

Radiation and its Effects on monolithic GaN integrated half..:

, In: 2022 22nd European Conference on Radiation and Its Effects on Components and Systems (RADECS),
Cosnier, T. ; Decoutere, S. ; Wens, M.... - p. 1-4 , 2022
 
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4

200 V GaN-on-SOI Smart Power Platform for Monolithic GaN Po..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Cosnier, T. ; Syshchyk, O. ; De Jaeger, B.... - p. 5.1.1-5.1.4 , 2021
 
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5

GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Li, X. ; Stoffels, S. ; Bakeroot, B.... - p. 4.4.1-4.4.4 , 2019
 
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10

Ready to use bioinformatics analysis as a tool to predict i..:

Cazelles, R. ; Lalaoui, N. ; Hartmann, T....
Biosensors and Bioelectronics.  85 (2016)  - p. 90-95 , 2016
 
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11

A H 2 /O 2 enzymatic fuel cell as a sustainable power for a..:

Monsalve, K. ; Mazurenko, I. ; Lalaoui, N....
Electrochemistry Communications.  60 (2015)  - p. 216-220 , 2015
 
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14

Development of a highly sensitive, field operable biosensor..:

Petrosova, A. ; Konry, T. ; Cosnier, S....
Sensors and Actuators B: Chemical.  122 (2007)  2 - p. 578-586 , 2007
 
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15

Fully-depleted SOI CMOS technology using WXN metal gate and..:

, In: ESSDERC 2007 - 37th European Solid State Device Research Conference,
Aime, D. ; Gassilloud, R. ; Martin, F.... - p. None , 2007
 
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