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Cristoloveanu, Sorin
237  results:
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1

Threshold voltage in FD-SOI MOSFETs:

Pananakakis, Georges ; Ghibaudo, Gérard ; Cristoloveanu, Sorin
Solid-State Electronics.  217 (2024)  - p. 108947 , 2024
Link: https://doi.org/10.1016/..
 
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2

C-V characterization of the trap-rich layer in a novel Doub..:

Huang, Yang ; Liu, Fanyu ; Cristoloveanu, Sorin...
Solid-State Electronics.  218 (2024)  - p. 108951 , 2024
Link: https://doi.org/10.1016/..
 
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3

Analysis of anomalous C-V behavior for extracting the traps..:

Huang, Yang ; Yan, Yiyi ; Nabet, Massinissa...
Solid-State Electronics.  217 (2024)  - p. 108946 , 2024
Link: https://doi.org/10.1016/..
 
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4

A New Compact Z2-FET Model Based on Artificial Neural Netwo..:

Liu, Chenyu ; Chen, Yingxin ; Cristoloveanu, Sorin...
IEEE Transactions on Electron Devices.  71 (2024)  6 - p. 3532-3539 , 2024
Link: https://doi.org/10.1109/..
 
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5

Robustness-Improved ESD Protection Devices With Low Leakage..:

Zhang, Cheng ; Li, Xiaojing ; Liu, Fanyu...
IEEE Transactions on Electron Devices.  71 (2024)  6 - p. 3504-3509 , 2024
Link: https://doi.org/10.1109/..
 
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6

The core-shell junctionless MOSFET:

Cristoloveanu, Sorin ; Ghibaudo, Gérard
Solid-State Electronics.  200 (2023)  - p. 108567 , 2023
Link: https://doi.org/10.1016/..
 
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7

Detailed comparison of threshold voltage extraction methods..:

Pananakakis, Georges ; Ghibaudo, Gérard ; Cristoloveanu, Sorin
Solid-State Electronics.  209 (2023)  - p. 108764 , 2023
Link: https://doi.org/10.1016/..
 
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8

C-V measurement and modeling of double-BOX Trap-Rich SOI su..:

Huang, Yang ; Yan, Yiyi ; Nabet, Massinissa...
Solid-State Electronics.  209 (2023)  - p. 108763 , 2023
Link: https://doi.org/10.1016/..
 
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9

Electron mobility distribution in FD-SOI MOSFETs using a NE..:

DehdashtiAkhavan, Nima ; Antonio Umana-Membreno, Gilberto ; Gu, Renjie...
Solid-State Electronics.  193 (2022)  - p. 108283 , 2022
Link: https://doi.org/10.1016/..
 
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10

Breaking the subthreshold slope limit in MOSFETs:

Cristoloveanu, Sorin ; Ghibaudo, Gérard
Solid-State Electronics.  198 (2022)  - p. 108465 , 2022
Link: https://doi.org/10.1016/..
 
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11

Fabrication and characterization of GaN-based nanostructure..:

Son, Dong-Hyeok ; Thingujam, Terirama ; Dai, Quan...
Solid-State Electronics.  184 (2021)  - p. 108079 , 2021
Link: https://doi.org/10.1016/..
 
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12

Band-modulation devices:

, In: Fully Depleted Silicon-On-insulator,
Cristoloveanu, Sorin - p. 267-298 , 2021
Link: https://doi.org/10.1016/..
 
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13

Coupling effects:

, In: Fully Depleted Silicon-On-insulator,
Cristoloveanu, Sorin - p. 41-70 , 2021
Link: https://doi.org/10.1016/..
 
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14

Floating-body effects:

, In: Fully Depleted Silicon-On-insulator,
Cristoloveanu, Sorin - p. 115-138 , 2021
Link: https://doi.org/10.1016/..
 
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15

A Review on the Recent Progress of Silicon‐on‐Insulator‐Bas..:

Liu, Jian ; Cristoloveanu, Sorin ; Wan, Jing
physica status solidi (a).  218 (2021)  14 - p. 2000751 , 2021
Link: https://doi.org/10.1002/..
 
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