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Da-Wei, Bi
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1

Radiation response of pseudo-MOS transistors fabricated in ..:

Da-Wei, Bi ; Zheng-Xuan, Zhang ; Shuai, Zhang...
Chinese Physics C.  33 (2009)  10 - p. 866-869 , 2009
Link: https://doi.org/10.1088/..
 
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2

Investigation on a solution to improve the irradiation reli..:

Wen-Jie, Yu ; Zheng-Xuan, Zhang ; Wei, He...
Chinese Physics C.  32 (2008)  12 - p. 989-991 , 2008
Link: https://doi.org/10.1088/..
 
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3

Metastable Electron Traps in Modified Silicon-on-Insulator ..:

Dai, Li-Hua ; Bi, Da-Wei ; Zhang, Zheng-Xuan...
Chinese Physics Letters.  35 (2018)  5 - p. 056101 , 2018
Link: https://doi.org/10.1088/..
 
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4

Influence of characteristics' measurement sequence on total..:

Xie, Xin ; Bi, Da-Wei ; Hu, Zhi-Yuan...
Chinese Physics B.  27 (2018)  12 - p. 128501 , 2018
Link: https://doi.org/10.1088/..
 
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5

Research on the radiation hardened SOI devices with single-..:

Dai, Li-Hua ; Bi, Da-Wei ; Hu, Zhi-Yuan...
Chinese Physics B.  27 (2018)  4 - p. 048503 , 2018
Link: https://doi.org/10.1088/..
 
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6

Enhanced radiation-induced narrow channel effects in 0.13-$..:

Zhang, Meng-Ying ; Hu, Zhi-Yuan ; Bi, Da-Wei..
Chinese Physics B.  27 (2018)  2 - p. 028501 , 2018
Link: https://doi.org/10.1088/..
 
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7

Influence of Tilted Angle on Effective Linear Energy Transf..:

Zhang, Le-Qing ; Lu, Jian ; Xu, Jia-Ling...
Chinese Physics Letters.  34 (2017)  11 - p. 118504 , 2017
Link: https://doi.org/10.1088/..
 
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8

Total ionizing dose induced single transistor latchup in 13..:

Fan, Shuang ; Hu, Zhi-Yuan ; Zhang, Zheng-Xuan...
Chinese Physics B.  26 (2017)  3 - p. 036103 , 2017
Link: https://doi.org/10.1088/..
 
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9

Utilizing a shallow trench isolation parasitic transistor t..:

Peng, Chao ; Hu, Zhi-Yuan ; Ning, Bing-Xu...
Chinese Physics B.  23 (2014)  9 - p. 090702 , 2014
Link: https://doi.org/10.1088/..
 
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10

Enhanced Radiation Sensitivity in Short-Channel Partially D..:

Peng, Chao ; Zhang, Zheng-Xuan ; Hu, Zhi-Yuan...
Chinese Physics Letters.  30 (2013)  9 - p. 098502 , 2013
Link: https://doi.org/10.1088/..
 
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11

The Enhanced Role of Shallow-Trench Isolation in Ionizing R..:

Huang, Hui-Xiang ; Bi, Da-Wei ; Peng, Chao..
Chinese Physics Letters.  30 (2013)  8 - p. 080701 , 2013
Link: https://doi.org/10.1088/..
 
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12

Bias dependence of a deep submicron NMOSFET response to tot..:

Liu, Zhang-Li ; Hu, Zhi-Yuan ; Zhang, Zheng-Xuan...
Chinese Physics B.  20 (2011)  7 - p. 070701 , 2011
Link: https://doi.org/10.1088/..
 
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13

Impact of substrate bias on radiation-induced edge effects ..:

Hu, Zhi-Yuan ; Liu, Zhang-Li ; Zhang, Zheng-Xuan...
Chinese Physics B.  20 (2011)  12 - p. 120702 , 2011
Link: https://doi.org/10.1088/..
 
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14

Enhanced Total Ionizing Dose Susceptibility in Narrow Chann..:

Liu, Zhang-Li ; Hu, Zhi-Yuan ; Zhang, Zheng-Xuan...
Chinese Physics Letters.  28 (2011)  7 - p. 070701 , 2011
Link: https://doi.org/10.1088/..
 
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15

Total ionizing dose effect in an input/output device for fl..:

Liu, Zhang-Li ; Hu, Zhi-Yuan ; Zhang, Zheng-Xuan...
Chinese Physics B.  20 (2011)  12 - p. 120703 , 2011
Link: https://doi.org/10.1088/..
 
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