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Dadwal, U.
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1

Study of surface exfoliation induced by hydrogen implantati..:

Pathak, Ravi ; Dadwal, U. ; Kapoor, A.K....
Materials Science in Semiconductor Processing.  134 (2021)  - p. 105998 , 2021
Link: https://doi.org/10.1016/..
 
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2

Large area stress free Si layer transfer onto Corning glass..:

Pathak, Ravi ; Dadwal, U ; Soni, K K.
Semiconductor Science and Technology.  34 (2019)  2 - p. 025003 , 2019
Link: https://doi.org/10.1088/..
 
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3

Calmodulin-dependent protein kinase kinase 2 as a novel the..:

Mevel, E. ; Li, Y. ; Dadwal, U....
Osteoarthritis and Cartilage.  26 (2018)  - p. S60-S61 , 2018
Link: https://doi.org/10.1016/..
 
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4

Study of hydrogen implantation-induced blistering in GaSb f..:

Pathak, Ravi ; Dadwal, U ; Singh, R
Journal of Physics D: Applied Physics.  50 (2017)  28 - p. 285301 , 2017
Link: https://doi.org/10.1088/..
 
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5

Physical mechanism of surface blistering process in H-impla..:

Dadwal, U. ; Kumar, Praveen ; Hähnel, A..
Journal of Materials Science.  51 (2016)  11 - p. 5397-5402 , 2016
Link: https://doi.org/10.1007/..
 
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6

Investigation of blistering process in H-implanted semipola..:

Dadwal, U. ; Buca, D. ; Mantl, S...
Scripta Materialia.  94 (2015)  - p. 21-24 , 2015
Link: https://doi.org/10.1016/..
 
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7

Effect of implantation temperature on the H-induced microst..:

Dadwal, U. ; Kumar, P. ; Moutanabbir, O...
Journal of Alloys and Compounds.  588 (2014)  - p. 300-304 , 2014
Link: https://doi.org/10.1016/..
 
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8

On the mechanism of blistering phenomenon in high temperatu..:

Dadwal, U. ; Singh, R.
Applied Physics Letters.  102 (2013)  8 - p. , 2013
Link: https://doi.org/10.1063/..
 
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9

Effect of implantation temperature on the blistering behavi..:

Dadwal, U. ; Scholz, R. ; Reiche, M....
Applied Physics A.  112 (2012)  2 - p. 451-456 , 2012
Link: https://doi.org/10.1007/..
 
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10

Blistering study of H-implanted InGaAs for potential hetero..:

Dadwal, U ; Kumar, A ; Scholz, R...
Semiconductor Science and Technology.  26 (2011)  8 - p. 085032 , 2011
Link: https://doi.org/10.1088/..
 
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11

Hydrogen implantation‐induced large area exfoliation in AlN..:

Dadwal, U. ; Scholz, R. ; Kumar, P....
physica status solidi (a).  207 (2010)  1 - p. 29-32 , 2010
Link: https://doi.org/10.1002/..
 
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12

Study of surface exfoliation induced by hydrogen implantati..:

Pathak, Ravi ; Dadwal, U ; Kapoor, A.K...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.mssp.2021.105998.  , 2021
Link: https://hal.science/hal-..
 
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13

Study of surface exfoliation induced by hydrogen implantati..:

Pathak, Ravi ; Dadwal, U ; Kapoor, A.K...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.mssp.2021.105998.  , 2021
Link: https://hal.science/hal-..
 
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14

Ion Implantation-Induced Layer Splitting of Semiconductors:

Dadwal, U
https://openresearchlibrary.org/viewer/4d92f520-bd75-498d-bfc4-85019e192355.  , 2012
Link: https://openresearchlibr..
 
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15

Ion Implantation-Induced Layer Splitting of Semiconductors:

U. Dadwal ; M. Reiche ; R. Singh
ISBN:978-953-51-0634-0.  , 2012
Link: https://mts.intechopen.c..
 
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