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Dammann, Michael
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1

Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to..:

, In: 2024 Device Research Conference (DRC),
Sinnwell, Matthias ; Dammann, Michael ; Driad, Rachid... - p. 1-2 , 2024
Link: https://doi.org/10.1109/..
 
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2

Normally-off quasi-vertical GaN FinFET on SiC substrate wit..:

, In: 2023 Device Research Conference (DRC),
Sinnwell, Matthias ; Dammann, Michael ; Driad, Rachid... - p. 1-2 , 2023
Link: https://doi.org/10.1109/..
 
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3

An Empirical Evaluation of Machine Learning Methods for the..:

, In: Proceedings of Sixth International Congress on Information and Communication Technology; Lecture Notes in Networks and Systems,
Dammann, Michael ; Gnoss, Nicolai ; Kunert, Pamela... - p. 933-941 , 2021
Link: https://doi.org/10.1007/..
 
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4

Si-Substrate Removal for AlGaN/GaN Devices on PCB Carriers:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Reiner, Richard ; Gerrer, Thomas ; Weiss, Beatrix... - p. 286-289 , 2020
Link: https://doi.org/10.1109/..
 
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5

Digitalisierung im pharmazeutischen Großhandel am Beispiel ..:

, In: Digitale Transformation von Dienstleistungen im Gesundheitswesen VII,
Dammann, Michael - p. 133-144 , 2020
Link: https://doi.org/10.1007/..
 
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6

Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under O..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),
Kemmer, Tobias ; Dammann, Michael ; Baeumler, Martina... - p. 1-6 , 2020
Link: https://doi.org/10.1109/..
 
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7

A homogeneous and reproducible large-area, low dispersion G..:

, In: 2018 76th Device Research Conference (DRC),
Waltereit, Patrick ; Preschle, Marina ; Muller, Stefan... - p. 1-2 , 2018
Link: https://doi.org/10.1109/..
 
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8

(In)AlGaN Heterojunction Field Effect Transistors and Circu..:

Maroldt, Stephan ; Quay, Rüdiger ; Dennler, Philippe...
Japanese Journal of Applied Physics.  52 (2013)  8S - p. 08JN13 , 2013
Link: https://doi.org/10.7567/..
 
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9

GaN‐based high‐frequency devices and circuits: A Fraunhofer..:

Waltereit, Patrick ; Bronner, Wolfgang ; Quay, Rüdiger...
physica status solidi (a).  209 (2012)  3 - p. 491-496 , 2012
Link: https://doi.org/10.1002/..
 
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10

Reproducible and uniform growth of GaN based HEMTs on 4 inc..:

Aidam, Rolf ; Waltereit, Patrick ; Kirste, Lutz..
physica status solidi (a).  207 (2010)  6 - p. 1450-1454 , 2010
Link: https://doi.org/10.1002/..
 
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11

Investigation of Leakage Current of AlGaN/GaN HEMTs Under P..:

Baeumler, Martina ; Gütle, Frank ; Polyakov, Vladimir...
Journal of Electronic Materials.  39 (2010)  6 - p. 756-760 , 2010
Link: https://doi.org/10.1007/..
 
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12

AlGaN/GaN epitaxy and technology:

Waltereit, Patrick ; Bronner, Wolfgang ; Quay, Rüdiger...
International Journal of Microwave and Wireless Technologies.  2 (2010)  1 - p. 3-11 , 2010
Link: https://doi.org/10.1017/..
 
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13

Advances in GaN Devices and Circuits at Higher mm-Wave Freq..:

Neininger, Philipp ; Mikulla, Michael ; Döring, Philipp...
e-Prime - Advances in Electrical Engineering, Electronics and Energy.  , 2023
Link: https://publica.fraunhof..
 
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14

Advances in GaN devices and circuits at higher mm-wave freq..:

Neininger, Philipp ; Mikulla, Michael ; Döring, Philipp...
https://freidok.uni-freiburg.de/data/242764.  , 2023
Link: https://freidok.uni-frei..
 
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15

Intelligenztests und maschinelles Lernen : Lösungsansätze m..:

Dammann, Michael
http://hdl.handle.net/20.500.12738/12528.  , 2022
Link: https://hdl.handle.net/2..
 
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