E-LIB Suche - Ergebnisse für: Dankovic, D.A.

1

Effects in Commercial p-Channel Power VDMOS Transistors Ini..:

, In: 2023 IEEE 33rd International Conference on Microelectronics (MIEL),

Veljkovic, S. ; Mitrovic, N. ; Djoric-Veljkovic, S.... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

2

Using TCAD Simulations to Verify the McWhorter Method for A..:

, In: 2023 IEEE 33rd International Conference on Microelectronics (MIEL),

Veljkovic, S. ; Ristic, G. ; Dankovic, D.... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

3

Is Microelectronics Recognizable in Serbian School System?:

, In: 2023 IEEE 33rd International Conference on Microelectronics (MIEL),

Marjanovic, M. ; Mitrovic, N. ; Veljkovic, S... - p. 1-6 , 2023

Link: https://doi.org/10.1109/..

4

Consecutive Irradiation and Thermal Annealing of Commercial..:

, In: 2023 IEEE 33rd International Conference on Microelectronics (MIEL),

Mitrovic, N. ; Guirado, D. ; Dankovic, D.... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

5

Characterization of the Electric Breakdowns in Metal-Insula..:

, In: 2023 IEEE 33rd International Conference on Microelectronics (MIEL),

Spassov, D. ; Paskaleva, A. ; Guziewicz, E.... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

6

Self-heating of stressed VDMOS devices under specific opera..:

Veljković, S. ; Mitrović, N. ; Jovanović, I....
Microelectronics Reliability. 150 (2023) - p. 115213 , 2023

Link: https://doi.org/10.1016/..

7

SPICE Modeling of RADFETs with Different Gate Oxide Thickne..:

, In: 2023 IEEE 33rd International Conference on Microelectronics (MIEL),

Marjanovic, M. ; Gurer, U. ; Mitrovic, N.... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

8

Impact of negative bias temperature instability on p-channe..:

Mitrović, N. ; Veljković, S. ; Davidović, V....
Microelectronics Reliability. 138 (2022) - p. 114634 , 2022

Link: https://doi.org/10.1016/..

9

Radiation and annealing related effects in NBT stressed P-c..:

Danković, D. ; Davidović, V. ; Golubović, S....
Microelectronics Reliability. 126 (2021) - p. 114273 , 2021

Link: https://doi.org/10.1016/..

10

Modelling of ΔVT in NBT Stressed P-Channel Power VDMOSFETs:

, In: 2019 IEEE 31st International Conference on Microelectronics (MIEL),

Mitrovic, N. ; Dankovic, D. ; Prijic, Z.. - p. 177-180 , 2019

Link: https://doi.org/10.1109/..

11

NBTI and irradiation related degradation mechanisms in powe..:

Stojadinović, N. ; Djorić-Veljković, S. ; Davidović, V....
Microelectronics Reliability. 88-90 (2018) - p. 135-141 , 2018

Link: https://doi.org/10.1016/..

12

A review of pulsed NBTI in P-channel power VDMOSFETs:

Danković, D. ; Manić, I. ; Prijić, A....
Microelectronics Reliability. 82 (2018) - p. 28-36 , 2018

Link: https://doi.org/10.1016/..

13

The Scientific Basis of Uncertainty Factors Used in Setting..:

Dankovic, D. A. ; Naumann, B. D. ; Maier, A...
Journal of Occupational and Environmental Hygiene. 12 (2015) sup1 - p. S55-S68 , 2015

Link: https://doi.org/10.1080/..

14

A method for negative bias temperature instability (NBTI) m..:

Prijić, A ; Danković, D ; Vračar, Lj...
Measurement Science and Technology. 23 (2012) 8 - p. 085003 , 2012

Link: https://doi.org/10.1088/..

15

NBTI related degradation and lifetime estimation in p-chann..:

Manić, I. ; Danković, D. ; Prijić, A....
Microelectronics Reliability. 51 (2011) 9-11 - p. 1540-1543 , 2011

Link: https://doi.org/10.1016/..