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DasGupta, Sandeepan
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1

A Review of GaN HEMT Dynamic ON-Resistance and Dynamic Stre..:

Gill, Lee ; DasGupta, Sandeepan ; Neely, Jason C...
IEEE Transactions on Power Electronics.  39 (2024)  1 - p. 517-537 , 2024
Link: https://doi.org/10.1109/..
 
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2

Erratum: "Electrically induced insulator to metal transitio..:

Shukla, Nikhil ; Joshi, Toyanath ; Dasgupta, Sandeepan...
Applied Physics Letters.  105 (2014)  3 - p. , 2014
Link: https://doi.org/10.1063/..
 
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3

Electrically induced insulator to metal transition in epita..:

Shukla, Nikhil ; Joshi, Toyanath ; Dasgupta, Sandeepan...
Applied Physics Letters.  105 (2014)  1 - p. , 2014
Link: https://doi.org/10.1063/..
 
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4

Computational analysis of breakdown voltage enhancement for..:

DasGupta, Sandeepan ; Baca, Albert G. ; Cich, Michael J.
Solid-State Electronics.  91 (2014)  - p. 59-66 , 2014
Link: https://doi.org/10.1016/..
 
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5

Interaction of Defects with Quantum Well States: Electrosta..:

Marinella, Matthew J. ; DasGupta, Sandeepan ; Kaplar, Robert J....
ECS Transactions.  58 (2013)  4 - p. 365-374 , 2013
Link: https://doi.org/10.1149/..
 
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6

Progress in SiC MOSFET Reliability:

Hughart, David R. ; Flicker, Jack D. ; DasGupta, Sandeepan...
ECS Transactions.  58 (2013)  4 - p. 211-220 , 2013
Link: https://doi.org/10.1149/..
 
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7

GaN-Based Wide-Bandgap Power Switching Devices: From Atoms ..:

Atcitty, Stanley ; Kaplar, Robert ; DasGupta, Sandeepan...
ECS Transactions.  50 (2013)  3 - p. 199-209 , 2013
Link: https://doi.org/10.1149/..
 
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8

Role of barrier structure in current collapse of AlGaN/GaN ..:

DasGupta, Sandeepan ; Biedermann, Laura B. ; Sun, Min...
Applied Physics Letters.  101 (2012)  24 - p. , 2012
Link: https://doi.org/10.1063/..
 
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9

Sub-Bandgap Light-Induced Carrier Generation at Room Temper..:

DasGupta, Sandeepan ; Armstrong, Andrew ; Kaplar, Robert...
Materials Science Forum.  717-720 (2012)  - p. 441-444 , 2012
Link: https://doi.org/10.4028/..
 
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10

Reliability of III–V devices – The defects that cause the t..:

Pantelides, Sokrates T. ; Puzyrev, Yevgeniy ; Shen, Xiao...
Microelectronic Engineering.  90 (2012)  - p. 3-8 , 2012
Link: https://doi.org/10.1016/..
 
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11

Sub-bandgap light-induced carrier generation at room temper..:

DasGupta, Sandeepan ; Armstrong, Andrew ; Kaplar, Robert...
Applied Physics Letters.  99 (2011)  17 - p. , 2011
Link: https://doi.org/10.1063/..
 
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12

Extraction of trapped charge in 4H-SiC metal oxide semicond..:

DasGupta, Sandeepan ; Brock, Reinhard ; Kaplar, Robert...
Applied Physics Letters.  99 (2011)  2 - p. , 2011
Link: https://doi.org/10.1063/..
 
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13

1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3..:

Roy, Tania ; Puzyrev, Yevgeniy S. ; Zhang, En Xia...
Microelectronics Reliability.  51 (2011)  2 - p. 212-216 , 2011
Link: https://doi.org/10.1016/..
 
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14

(Invited) High Power Semiconductor Devices for FACTS: Curre..:

Marinella, Matthew J. ; Atcitty, Stanley ; DasGupta, Sandeepan..
ECS Transactions.  41 (2011)  8 - p. 19-30 , 2011
Link: https://doi.org/10.1149/..
 
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15

Critical charge and set pulse widths for combinational logi..:

, In: Proceedings of the 17th ACM Great Lakes symposium on VLSI,
Naseer, Riaz ; Draper, Jeff ; Boulghassoul, Younes.. - p. 227-230 , 2007
Link: https://dl.acm.org/doi/1..
 
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