E-LIB Suche - Ergebnisse für: Dawidowski, Wojciech

1

Effect of sputtering power and oxygen partial pressure on s..:

Kiliszkiewicz, Milena ; Domaradzki, Jarosław ; Posadowski, Witold...
Applied Surface Science. 670 (2024) - p. 160601 , 2024

Link: https://doi.org/10.1016/..

2

P-Type ZnO Films Made by Atomic Layer Deposition and Ion Im..:

Zhang, Guoxiu ; Rebohle, Lars ; Ganss, Fabian...
Nanomaterials. 14 (2024) 13 - p. 1069 , 2024

Link: https://doi.org/10.3390/..

3

Fabrication and characterization of heavily doped n-type Ga..:

Duan, Juanmei ; Liedke, Maciej O. ; Dawidowski, Wojciech...
Journal of Applied Physics. 134 (2023) 9 - p. , 2023

Link: https://doi.org/10.1063/..

4

Influence of As-N Interstitial Complexes on Strain Generate..:

Ściana, Beata ; Dawidowski, Wojciech ; Radziewicz, Damian...
Energies. 15 (2022) 9 - p. 3036 , 2022

Link: https://doi.org/10.3390/..

5

Influence of Annealing Temperature on Emission and Capture ..:

, In: 2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM),

Benko, Peter ; Kosa, Arpad ; Matus, Matej... - p. 1-4 , 2022

Link: https://doi.org/10.1109/..

6

Evaluation of Effective Mass in InGaAsN/GaAs Quantum Wells ..:

Stuchlikova, Lubica ; Sciana, Beata ; Kosa, Arpad...
Materials. 15 (2022) 21 - p. 7621 , 2022

Link: https://doi.org/10.3390/..

7

Tunnel junction limited performance of InGaAsN/GaAs tandem ..:

Dawidowski, Wojciech ; Ściana, Beata ; Zborowska-Lindert, Iwona...
Solar Energy. 214 (2021) - p. 632-641 , 2021

Link: https://doi.org/10.1016/..

8

Analysis of Current Transport Mechanism in AP-MOVPE Grown G..:

Dawidowski, Wojciech ; Ściana, Beata ; Bielak, Katarzyna...
Energies. 14 (2021) 15 - p. 4651 , 2021

Link: https://doi.org/10.3390/..

9

DLTS study of InGaAs and GaAsN structures with different in..:

Kosa, Arpad ; Stuchlikova, Lubica ; Harmatha, Ladislav...
Materials Science in Semiconductor Processing. 74 (2018) - p. 313-318 , 2018

Link: https://doi.org/10.1016/..

10

A cross‐sectional scanning capacitance microscopy character..:

Szyszka, Adam ; Dawidowski, Wojciech ; Stafiniak, Andrzej...
Crystal Research and Technology. 52 (2017) 6 - p. , 2017

Link: https://doi.org/10.1002/..

11

Influence of GaInNAs/GaAs QWs composition profile on the tr..:

Pucicki, Damian ; Bielak, Katarzyna ; Badura, Mikołaj..
Microelectronic Engineering. 161 (2016) - p. 13-17 , 2016

Link: https://doi.org/10.1016/..

12

Scanning capacitance microscopy characterization of AIIIBV ..:

Szyszka, Adam ; Obłąk, Michał ; Szymański, Tomasz...
Materials Science-Poland. 34 (2016) 4 - p. 845-850 , 2016

Link: https://doi.org/10.1515/..

13

The influence of top electrode of InGaAsN/GaAs solar cell o..:

Dawidowski, Wojciech ; Ściana, Beata ; Zborowska-Lindert, Iwona...
Solid-State Electronics. 120 (2016) - p. 13-18 , 2016

Link: https://doi.org/10.1016/..

14

Electrophysical Properties of GaAs P–I–N Structures for Con..:

Kósa, Arpád ; Mikolášek, Miroslav ; Stuchlíková, Ľubica...
Journal of Electrical Engineering. 67 (2016) 5 - p. 377-382 , 2016

Link: https://doi.org/10.1515/..

15

AP-MOVPE Technology and Characterization of InGaAsN p-i-n S..:

Dawidowski, Wojciech ; Šciana, Beata ; Zborowska-Lindert, Iwona...
International Journal of Electronics and Telecommunications. 60 (2014) 2 - p. 151-156 , 2014

Link: https://doi.org/10.2478/..