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Decoster, S.
321  results:
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1

Towards low damage and fab-compatible top-contacts in MX2 t..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Kundu, S. ; van Dorp, D. H. ; Schram, T.... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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2

Selective ALD Mo Deposition in 10nm Contacts:

, In: 2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM),
van der Veen, Marleen H. ; Maes, J. W. ; Pedreira, O. Varela... - p. 1-3 , 2023
Link: https://doi.org/10.1109/..
 
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3

Integrating 8nm Self-Aligned Tip-to-Tip to Enable 4-track S..:

, In: 2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM),
Marien, P. ; Gonzalez, V. V. ; Choudhury, S.... - p. 1-3 , 2023
Link: https://doi.org/10.1109/..
 
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4

Improving uniformity of 3-level High Aspect Ratio Supervias:

, In: 2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM),
Montero, D. ; Marien, P. ; Hermans, Y.... - p. 1-3 , 2023
Link: https://doi.org/10.1109/..
 
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5

Reliability Evaluation of Semi-damascene Ru/Air-Gap interco..:

, In: 2022 IEEE International Interconnect Technology Conference (IITC),
Lesniewska, A. ; Pedreira, O. Varela ; Roussel, Ph. J.... - p. 28-30 , 2022
Link: https://doi.org/10.1109/..
 
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6

Semi-damascene Integration of a 2-layer MOL VHV Scaling Boo..:

, In: 2022 International Electron Devices Meeting (IEDM),
Vega-Gonzalez, V. ; Radisic, D. ; Choudhury, S.... - p. 23.2.1-23.2.4 , 2022
Link: https://doi.org/10.1109/..
 
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7

First demonstration of Two Metal Level Semi-damascene Inter..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Murdoch, G. ; O'Toole, M. ; Marti, G.... - p. 1-2 , 2022
Link: https://doi.org/10.1109/..
 
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8

Hybrid Metallization with Cu in sub 30nm Interconnects:

, In: 2020 IEEE International Interconnect Technology Conference (IITC),
van der Veen, Marleen H. ; Soethoudt, J. ; Delabie, A.... - p. 16-18 , 2020
Link: https://doi.org/10.1109/..
 
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9

Three-Layer BEOL Process Integration with Supervia and Self..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Vega-Gonzalez, V. ; Bekaert, J. ; Kesters, E.... - p. 19.3.1-19.3.4 , 2019
Link: https://doi.org/10.1109/..
 
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10

Characterization of Patterned Porous Low-kDielectrics: Surf..:

Le, Q. T. ; Kesters, E. ; Decoster, S....
ECS Journal of Solid State Science and Technology.  5 (2016)  3 - p. N5-N9 , 2016
Link: https://doi.org/10.1149/..
 
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11

Electrical and Structural Properties of In and In + C Doped..:

Feng, R. ; Kremer, F. ; Sprouster, D. J....
Microscopy and Microanalysis.  22 (2016)  S3 - p. 1444-1445 , 2016
Link: https://doi.org/10.1017/..
 
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12

Electrical and structural properties of In-implanted Si1−xG..:

Feng, R. ; Kremer, F. ; Sprouster, D. J....
Journal of Applied Physics.  119 (2016)  2 - p. , 2016
Link: https://doi.org/10.1063/..
 
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13

EXAFS study of the structural properties of In and In + C i..:

Feng, R ; Kremer, F ; Sprouster, D J...
Journal of Physics: Conference Series.  712 (2016)  - p. 012102 , 2016
Link: https://doi.org/10.1088/..
 
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14

Lattice sites of Na dopants in ZnO:

Wahl, U ; Correia, J G ; Amorim, L...
Semiconductor Science and Technology.  31 (2016)  9 - p. 095005 , 2016
Link: https://doi.org/10.1088/..
 
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15

Enhanced electrical activation in In-implanted Ge by C co-d..:

Feng, R. ; Kremer, F. ; Sprouster, D. J....
Applied Physics Letters.  107 (2015)  21 - p. , 2015
Link: https://doi.org/10.1063/..
 
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