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Derenge, Michael A.
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1

First formed dislocations in microcompressed c-oriented GaN..:

Magagnosc, Daniel J. ; Derenge, Michael A. ; Jones, Kenneth A.
Journal of Applied Physics.  128 (2020)  4 - p. , 2020
Link: https://doi.org/10.1063/..
 
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2

Topological and electrical properties of capped and anneale..:

Derenge, Michael A. ; Jones, Kenneth A.
Journal of Applied Physics.  126 (2019)  3 - p. , 2019
Link: https://doi.org/10.1063/..
 
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3

Annealing studies of AlN capped, MOCVD grown GaN films:

Derenge, Michael A. ; Kirchner, Kevin W. ; Jones, Kenneth A...
Solid-State Electronics.  101 (2014)  - p. 23-28 , 2014
Link: https://doi.org/10.1016/..
 
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4

Achieving Low Doped (<1016) GaN with Large Breakdown Voltag..:

Tompkins, Randy P. ; Smith, J. R. ; Derenge, Michael A....
ECS Transactions.  50 (2013)  3 - p. 297-305 , 2013
Link: https://doi.org/10.1149/..
 
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5

HVPE GaN for high power electronic Schottky diodes:

Tompkins, Randy P. ; Walsh, Timothy A. ; Derenge, Michael A....
Solid-State Electronics.  79 (2013)  - p. 238-243 , 2013
Link: https://doi.org/10.1016/..
 
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6

GaN Power Schottky Diodes:

Tompkins, Randy P. ; Smith, Joshua R. ; Zhou, Shuai...
ECS Transactions.  45 (2012)  7 - p. 17-25 , 2012
Link: https://doi.org/10.1149/..
 
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7

The effect of carbon impurities on lightly doped MOCVD GaN ..:

Tompkins, Randy P. ; Walsh, Timothy A. ; Derenge, Michael A....
Journal of Materials Research.  26 (2011)  23 - p. 2895-2900 , 2011
Link: https://doi.org/10.1557/..
 
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8

Si implant-assisted Ohmic contacts to GaN:

Nguyen, Cuong ; Shah, Pankaj ; Leong, Edward..
Solid-State Electronics.  54 (2010)  10 - p. 1227-1231 , 2010
Link: https://doi.org/10.1016/..
 
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9

Comparison of Graphite and BN/AlN Annealing Caps for Ion Im..:

Jones, Kenneth A. ; Wood, M.C. ; Zheleva, T.S....
Materials Science Forum.  556-557 (2007)  - p. 575-578 , 2007
Link: https://doi.org/10.4028/..
 
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10

Mosaicity and Wafer Bending in SiC Wafers as Measured by Do..:

Kirchner, K.W. ; Jones, Kenneth A. ; Derenge, Michael A...
Materials Science Forum.  556-557 (2007)  - p. 213-218 , 2007
Link: https://doi.org/10.4028/..
 
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11

Variations in the Effects of Implanting Al at Different Con..:

Jones, Kenneth A. ; Zheleva, T.S. ; Shah, Pankaj B....
Materials Science Forum.  527-529 (2006)  - p. 831-834 , 2006
Link: https://doi.org/10.4028/..
 
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12

Characteristics and Ionization Coefficient Extraction of 1k..:

Zhu, Lin ; Losee, Peter A. ; Chow, T. Paul...
Materials Science Forum.  527-529 (2006)  - p. 1367-1370 , 2006
Link: https://doi.org/10.4028/..
 
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13

Observation of Thermal-Annealing Evolution of Defects in Io..:

Freitas, Jaime A. ; Jones, Kenneth A. ; Derenge, Michael A...
Materials Science Forum.  527-529 (2006)  - p. 847-850 , 2006
Link: https://doi.org/10.4028/..
 
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14

Activation of Implanted Al and Co-Implanted Al/C or Al/Si i..:

Jones, Kenneth A. ; Zheleva, T.S. ; Ervin, Matthew H....
Materials Science Forum.  457-460 (2004)  - p. 929-932 , 2004
Link: https://doi.org/10.4028/..
 
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15

Electrical, microstructural, and thermal stability characte..:

Motayed, Abhishek ; Jones, Kenneth A. ; Derenge, Michael A....
Journal of Applied Physics.  95 (2004)  3 - p. 1516-1524 , 2004
Link: https://doi.org/10.1063/..
 
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