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Dimitrijev, Sima
203  results:
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1

Mechanisms of negative bias instability of commercial SiC M..:

Chaturvedi, Mayank ; Haasmann, Daniel ; Tanner, Philip.
Solid-State Electronics.  215 (2024)  - p. 108880 , 2024
Link: https://doi.org/10.1016/..
 
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2

Highly Efficient Photon Energy Conversion and Ultrasensitiv..:

Ninh, Dinh Gia ; Hoang, Minh Tam ; Nguyen, Tuan-Hung...
ACS Applied Materials & Interfaces.  16 (2024)  29 - p. 38658-38668 , 2024
Link: https://doi.org/10.1021/..
 
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3

Electrically Active Defects in SiC Power MOSFETs:

Chaturvedi, Mayank ; Haasmann, Daniel ; Moghadam, Hamid Amini.
Energies.  16 (2023)  4 - p. 1771 , 2023
Link: https://doi.org/10.3390/..
 
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4

Engineering Route for Stretchable, 3D Microarchitectures of..:

Truong, Thanh‐An ; Nguyen, Tuan Khoa ; Huang, Xinghao...
Advanced Functional Materials.  33 (2023)  34 - p. , 2023
Link: https://doi.org/10.1002/..
 
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5

Engineering Route for Stretchable, 3D Microarchitectures of..:

Truong, Thanh‐An ; Nguyen, Tuan Khoa ; Huang, Xinghao...
Advanced Functional Materials.  33 (2023)  34 - p. , 2023
Link: https://doi.org/10.1002/..
 
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6

The effect of wafer thinning and thermal capacitance on chi..:

Damcevska, Jenny ; Dimitrijev, Sima ; Haasmann, Daniel.
Scientific Reports.  13 (2023)  1 - p. , 2023
Link: https://doi.org/10.1038/..
 
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7

Passivation of Very Fast Near-Interface Traps at the 4H-SiC..:

Vidarsson, Arnar Mar ; Haasmann, Daniel ; Dimitrijev, Sima.
Materials Science Forum.  1090 (2023)  - p. 101-105 , 2023
Link: https://doi.org/10.4028/..
 
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8

Comparison of the Performance-Degrading Near-Interface Trap..:

Chaturvedi, Mayank ; Dimitrijev, Sima ; Haasmann, Daniel...
Materials Science Forum.  1091 (2023)  - p. 25-29 , 2023
Link: https://doi.org/10.4028/..
 
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9

Circuit-Specific and Technology-Independent Criterion for S..:

Joshi, Vikas ; Jadli, Utkarsh ; Pande, Peyush...
IEEE Access.  11 (2023)  - p. 116472-116479 , 2023
Link: https://doi.org/10.1109/..
 
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10

Comparison of Commercial Planar and Trench SiC MOSFETs by E..:

Chaturvedi, Mayank ; Dimitrijev, Sima ; Haasmann, Daniel...
IEEE Transactions on Electron Devices.  69 (2022)  11 - p. 6225-6230 , 2022
Link: https://doi.org/10.1109/..
 
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11

Observation of Fast Near-Interface Traps in 4H-SiC MOS Capa..:

Vidarsson, A.M. ; Nicholls, J.R. ; Haasmann, Daniel..
Materials Science Forum.  1062 (2022)  - p. 288-292 , 2022
Link: https://doi.org/10.4028/..
 
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12

A Figure of Merit for Selection of the Best Family of SiC P..:

Chaturvedi, Mayank ; Dimitrijev, Sima ; Haasmann, Daniel...
Electronics.  11 (2022)  9 - p. 1433 , 2022
Link: https://doi.org/10.3390/..
 
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13

Quantified density of performance-degrading near-interface ..:

Chaturvedi, Mayank ; Dimitrijev, Sima ; Haasmann, Daniel...
Scientific Reports.  12 (2022)  1 - p. , 2022
Link: https://doi.org/10.1038/..
 
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14

Detection of near-interface traps in NO annealed 4H-SiC met..:

Vidarsson, Arnar M. ; Nicholls, Jordan R. ; Haasmann, Daniel..
Journal of Applied Physics.  131 (2022)  21 - p. 215702 , 2022
Link: https://doi.org/10.1063/..
 
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15

Giant Piezotronic Effect by Photoexcitation–Electronic Coup..:

Nguyen, Hong-Quan ; Foisal, Abu Riduan Md ; Tanner, Philip...
ACS Applied Electronic Materials.  4 (2022)  6 - p. 2648-2655 , 2022
Link: https://doi.org/10.1021/..
 
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