E-LIB Suche - Ergebnisse für: Dong, Qing-Tai

1

FAM3 family genes are associated with prognostic value of h..:

Dong, Qing-Tai ; Ma, Dan-Dan ; Gong, Qi...
Scientific Reports. 13 (2023) 1 - p. , 2023

Link: https://doi.org/10.1038/..

2

FAM3 family genes are associated with prognostic value of h..:

Dong, Qing-Tai ; Ma, Dan-Dan ; Gong, Qi...
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10499837/. , 2023

Link: http://www.ncbi.nlm.nih...

3

Vertical GeSn nanowire MOSFETs for CMOS beyond silicon:

Liu, Mingshan ; Junk, Yannik ; Han, Yi...
Communications Engineering. 2 (2023) 1 - p. , 2023

Link: https://doi.org/10.1038/..

4

Epitaxial GeSn/Ge Vertical Nanowires for p-Type Field-Effec..:

Liu, Mingshan ; Yang, Dong ; Shkurmanov, Alexander...
ACS Applied Nano Materials. 4 (2020) 1 - p. 94-101 , 2020

Link: https://doi.org/10.1021/..

5

Isolation and Identification of Six Difunctional Ethyl Este..:

Li, Min ; Liu, Dong ; Cong, Xing-Shun...
Energy & Fuels. 32 (2018) 10 - p. 10649-10655 , 2018

Link: https://doi.org/10.1021/..

6

Efficient Hydroliquefaction of Sawdust over a Novel Silica-..:

Li, Min ; Liu, Dong ; Wu, Ping-Ping...
Energy & Fuels. 30 (2016) 8 - p. 6495-6499 , 2016

Link: https://doi.org/10.1021/..

7

Longitudinal and transverse moments of the distribution of ..:

Wang, Ke-Ming ; Qu, Bao-Dong ; Shi, Bo-Rong...
Journal of Physics D: Applied Physics. 28 (1995) 6 - p. 1158-1161 , 1995

Link: https://doi.org/10.1088/..

8

Investigation of depth distributions of defects in Si creat..:

Wang, Ke-Ming ; Shi, Bo-Rong ; Ma, Shi-Jie...
Vacuum. 45 (1994) 9 - p. 955-958 , 1994

Link: https://doi.org/10.1016/..

9

Damage profiles in silicon tilt angles bombarded by high en..:

Wang, Ke-Ming ; Shi, Bo-Rong ; Wang, Zhong-Lie...
Journal of Applied Physics. 76 (1994) 6 - p. 3357-3361 , 1994

Link: https://doi.org/10.1063/..

10

Dechannelling analysis of damage in Si created by MeV Ti io..:

Wang, Ke-Ming ; Shi, Bo-Rong ; Liu, Xiang-Dong...
Journal of Physics D: Applied Physics. 27 (1994) 3 - p. 571-573 , 1994

Link: https://doi.org/10.1088/..

11

Two-dimensional distributions of Xe ions implanted in Si3N4..:

Wang, Ke-Ming ; Wang, Zhong-Lie ; Shi, Bo-Rong...
Vacuum. 44 (1993) 10 - p. 1045-1048 , 1993

Link: https://doi.org/10.1016/..

12

Investigation of lateral straggling of Xe ions in potassium..:

Wang, Ke-Ming ; Shi, Bo-Rong ; Qu, Bao-Dong...
Journal of Applied Physics. 73 (1993) 11 - p. 7222-7224 , 1993

Link: https://doi.org/10.1063/..

13

Damage profiles in silicon induced by 1.0 MeV Ti ions at ti..:

Wang, Ke-Ming ; Shi, Bo-Rong ; Liu, Xiang-Dong...
Physics Letters A. 166 (1992) 5-6 - p. 361-364 , 1992

Link: https://doi.org/10.1016/..

14

Lattice disorder in silicon induced by 2.0 MeV Cu+ irradiat..:

Wang, Ke-Ming ; Shi, Bo-Rong ; Liu, Xiang-Dong...
Applied Physics A Solids and Surfaces. 55 (1992) 4 - p. 332-334 , 1992

Link: https://doi.org/10.1007/..

15

Lateral spread effects in the implantation of Ar+, Xe+, and..:

Wang, Ke-Ming ; Qu, Bao-Dong ; Shi, Bo-Rong...
Journal of Applied Physics. 72 (1992) 9 - p. 4003-4006 , 1992

Link: https://doi.org/10.1063/..