Dorow, C. J.
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2

Exploring manufacturability of novel 2D channel materials: ..:

, In: 2023 International Electron Devices Meeting (IEDM),
Dorow, C. J. ; Schram, T. ; Smets, Q.... - p. 1-4 , 2023
 
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3

Reliability Assessment of Double-Gated Wafer-Scale MoS2 Fie..:

, In: 2023 International Electron Devices Meeting (IEDM),
Provias, A. ; Knobloch, T. ; Kitamura, A.... - p. 1-4 , 2023
 
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4

2D Materials in the BEOL:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Naylor, C. H. ; Maxey, K. ; Jezewski, C.... - p. 1-2 , 2023
 
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5

High Mobility TMD NMOS and PMOS Transistors and GAA Archite..:

, In: 2023 International Electron Devices Meeting (IEDM),
Penumatcha, A. ; O'Brien, K. P. ; Maxey, K.... - p. 1-4 , 2023
 
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6

Gate length scaling beyond Si: Mono-layer 2D Channel FETs R..:

, In: 2022 International Electron Devices Meeting (IEDM),
Dorow, C. J. ; Penumatcha, A. ; Kitamura, A.... - p. 7.5.1-7.5.4 , 2022
 
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7

300 mm MOCVD 2D CMOS Materials for More (Than) Moore Scalin:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Maxey, K. ; Naylor, C. H. ; O'Brien, K. P.... - p. 419-420 , 2022
 
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8

Advancing 2D Monolayer CMOS Through Contact, Channel and In..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
O'Brien, K. P. ; Dorow, C. J. ; Penumatcha, A.... - p. 7.1.1-7.1.4 , 2021
 
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10

Evidence for a universal Fermi-liquid scattering rate throu..:

Barišić, N ; Chan, M K ; Veit, M J...
New Journal of Physics.  21 (2019)  11 - p. 113007 , 2019
 
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11

High-Mobility Indirect Excitons in a Wide Single Quantum We..:

, In: 2019 Conference on Lasers and Electro-Optics (CLEO),
Dorow, C.J. ; Choksy, D.J. ; Hasling, M.W.... - p. 1-2 , 2019
 
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12

Split-gate device for indirect excitons:

Dorow, C. J. ; Leonard, J. R. ; Fogler, M. M....
Applied Physics Letters.  112 (2018)  18 - p. , 2018
 
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