I agree that this site is using cookies. You can find further informations here.
X
Douhard, B.
45  results:
Search for persons X
?
1

Very Low Temperature Epitaxy of Group-IV Semiconductors for..:

Porret, C. ; Hikavyy, A. ; Granados, J. F. Gomez...
ECS Journal of Solid State Science and Technology.  8 (2019)  8 - p. P392-P399 , 2019
Link: https://doi.org/10.1149/..
 
?
2

Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passi..:

Loo, R. ; Arimura, H. ; Cott, D....
ECS Journal of Solid State Science and Technology.  7 (2018)  2 - p. P66-P72 , 2018
Link: https://doi.org/10.1149/..
 
?
3

Careful stoichiometry monitoring and doping control during ..:

El Kazzi, S. ; Alian, A. ; Hsu, B....
Journal of Crystal Growth.  484 (2018)  - p. 86-91 , 2018
Link: https://doi.org/10.1016/..
 
?
4

Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on..:

Gupta, S. ; Shimura, Y. ; Richard, O....
Applied Physics Letters.  113 (2018)  19 - p. , 2018
Link: https://doi.org/10.1063/..
 
?
5

Field Effect and Strongly Localized Carriers in the Metal-I..:

Martens, K. ; Jeong, J. W. ; Aetukuri, N....
Physical Review Letters.  115 (2015)  19 - p. , 2015
Link: https://doi.org/10.1103/..
 
?
6

Comparing n- and p-type polycrystalline silicon absorbers i..:

Deckers, J. ; Bourgeois, E. ; Jivanescu, M....
Thin Solid Films.  579 (2015)  - p. 144-152 , 2015
Link: https://doi.org/10.1016/..
 
?
7

Staggered band gap n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki diod..:

El Kazzi, S. ; Smets, Q. ; Ezzedini, M....
Journal of Crystal Growth.  424 (2015)  - p. 62-67 , 2015
Link: https://doi.org/10.1016/..
 
?
8

Understanding the EOT–Jg degradation in Ru/SrTiOx/Ru metal–..:

Popovici, M. ; Redolfi, A. ; Aoulaiche, M....
Microelectronic Engineering.  147 (2015)  - p. 108-112 , 2015
Link: https://doi.org/10.1016/..
 
?
9

Cesium/Xenon dual beam sputtering in a Cameca instrument:

Pureti, R. ; Douhard, B. ; Joris, D...
Surface and Interface Analysis.  46 (2014)  S1 - p. 25-30 , 2014
Link: https://doi.org/10.1002/..
 
?
10

Implantation and Activation of Phosphorus in Amorphous and ..:

Lieten, R. R. ; Douhard, B. ; Stesmans, A....
ECS Journal of Solid State Science and Technology.  2 (2013)  9 - p. P346-P350 , 2013
Link: https://doi.org/10.1149/..
 
?
11

Selective area growth of InP in shallow trench isolation on..:

Merckling, C. ; Waldron, N. ; Jiang, S....
Journal of Applied Physics.  114 (2013)  3 - p. , 2013
Link: https://doi.org/10.1063/..
 
?
12

Epitaxial Chemical Vapor Deposition of Silicon on an Oxygen..:

Delabie, A. ; Jayachandran, S. ; Caymax, M....
ECS Solid State Letters.  2 (2013)  11 - p. P104-P106 , 2013
Link: https://doi.org/10.1149/..
 
?
13

Integration of Inline Single-side Wet Emitter Etch in PERC ..:

Cornagliotti, E. ; Ngamo, M. ; Tous, L....
Energy Procedia.  27 (2012)  - p. 624-630 , 2012
Link: https://doi.org/10.1016/..
 
?
14

Simulation of the Anneal of Ion Implanted Boron Emitters an..:

Florakis, A. ; Janssens, T. ; Rosseel, E....
Energy Procedia.  27 (2012)  - p. 240-246 , 2012
Link: https://doi.org/10.1016/..
 
?
15

Contact resistivity and Fermi-level pinning in n-type Ge co..:

Martens, Koen ; Rooyackers, R. ; Firrincieli, A....
Applied Physics Letters.  98 (2011)  1 - p. , 2011
Link: https://doi.org/10.1063/..
 
1-15