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Duan, Xinlv
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1

Monolithically Stacked Two Layers of a-IGZO-Based Transisto..:

Lu, Wendong ; Lu, Congyan ; Yang, Guanhua...
IEEE Transactions on Electron Devices.  70 (2023)  4 - p. 1697-1701 , 2023
Link: https://doi.org/10.1109/..
 
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2

30 Mb/mm2/layer 3D eDRAM Computing-in-Memory with Embedded ..:

, In: 2023 International Electron Devices Meeting (IEDM),
Tang, Wenjun ; Chen, Chuanke ; Liu, Jialong... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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3

First Demonstration of Stacked 2T0C-DRAM Bit-Cell Construct..:

, In: 2023 International Electron Devices Meeting (IEDM),
Chen, Chuanke ; Xiang, Jinjuan ; Duan, Xinlv... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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4

Cell Structure and Process Integration of a Novel 2T0C Tech..:

, In: 2023 China Semiconductor Technology International Conference (CSTIC),
Zhu, Zheng-Yong ; Kang, Bok-Moon ; Zhang, Jing... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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5

A Direct n+-Formation Process by Magnetron Sputtering an In..:

Duan, Xinlv ; Lu, Congyan ; Chuai, Xichen...
Micromachines.  13 (2022)  5 - p. 652 , 2022
Link: https://doi.org/10.3390/..
 
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6

Inter-Layer Dielectric Engineering for Monolithic Stacking ..:

, In: 2022 International Electron Devices Meeting (IEDM),
Chen, Chuanke ; Duan, Xinlv ; Yang, Guanhua... - p. 26.5.1-26.5.4 , 2022
Link: https://doi.org/10.1109/..
 
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7

27‐3: Invited Paper: High‐Performance Sub‐50nm Channel Leng..:

Duan, Xinlv ; Huang, Kailiang ; Feng, Junxiao...
SID Symposium Digest of Technical Papers.  53 (2022)  1 - p. 318-321 , 2022
Link: https://doi.org/10.1002/..
 
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8

P‐1.8: A New n+‐Formation Process by NH3Plasma Treatment fo..:

Chen, Chuanke ; Duan, Xinlv ; Chen, Qian...
SID Symposium Digest of Technical Papers.  53 (2022)  S1 - p. 594-595 , 2022
Link: https://doi.org/10.1002/..
 
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9

Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for ..:

Duan, Xinlv ; Huang, Kailiang ; Feng, Junxiao...
IEEE Transactions on Electron Devices.  69 (2022)  4 - p. 2196-2202 , 2022
Link: https://doi.org/10.1109/..
 
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10

First Demonstration of Dual-Gate IGZO 2T0C DRAM with Novel ..:

, In: 2022 International Electron Devices Meeting (IEDM),
Lu, Wendong ; Zhu, Zhengyong ; Chen, Kaifei... - p. 26.4.1-26.4.4 , 2022
Link: https://doi.org/10.1109/..
 
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11

An Advanced Full Adder Based Arithmetic Logic Unit (ALU) Us..:

Ji, Hansai ; Geng, Di ; Chuai, Xichen...
IEEE Transactions on Electron Devices.  69 (2022)  11 - p. 6160-6165 , 2022
Link: https://doi.org/10.1109/..
 
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12

Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Le..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Chen, Kaifei ; Niu, Jiebin ; Yang, Guanhua... - p. 298-299 , 2022
Link: https://doi.org/10.1109/..
 
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13

Compact Modeling of IGZO-based CAA-FETs with Time-zero-inst..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Guo, Jingrui ; Sun, Ying ; Wang, Lingfei... - p. 300-301 , 2022
Link: https://doi.org/10.1109/..
 
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14

Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD w..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Huang, Kailiang ; Duan, Xinlv ; Feng, Junxiao... - p. 296-297 , 2022
Link: https://doi.org/10.1109/..
 
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15

Investigation of Asymmetric Characteristics of Novel Vertic..:

Chen, Qian ; Wang, Lingfei ; Duan, Xinlv...
IEEE Electron Device Letters.  43 (2022)  6 - p. 894-897 , 2022
Link: https://doi.org/10.1109/..
 
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