E-LIB Suche - Ergebnisse für: Dun-Jun, Chen

1

UV Light-Emitting Diodes at 340 nm Fabricated on a Bulk GaN..:

Xiao-Zhang, Du ; Hai, Lu ; Dun-Jun, Chen...
Chinese Physics Letters. 27 (2010) 8 - p. 088105 , 2010

Link: https://doi.org/10.1088/..

2

Improved Programming Efficiency through Additional Boron Im..:

Yue, Xu ; Feng, Yan ; Dun-Jun, Chen...
Chinese Physics Letters. 27 (2010) 6 - p. 067201 , 2010

Link: https://doi.org/10.1088/..

3

Au/Pt/InGaN/GaN Heterostructure Schottky Prototype Solar Ce..:

Jun-Jun, Xue ; Dun-Jun, Chen ; Bin, Liu...
Chinese Physics Letters. 26 (2009) 9 - p. 098102 , 2009

Link: https://doi.org/10.1088/..

4

Photoresponse of the In0.3Ga0.7N metal–insulator–semiconduc..:

Jian-Jun, Zhou ; Bo, Wen ; Ruo-Lian, Jiang...
Chinese Physics. 16 (2007) 7 - p. 2120-2122 , 2007

Link: https://doi.org/10.1088/..

5

Surface States in the AlxGa1 xN Barrier in AlxGa1 xN/GaN He..:

Jie, Liu ; Bo, Shen ; Mao-Jun, Wang...
Chinese Physics Letters. 21 (2004) 1 - p. 170-172 , 2004

Link: https://doi.org/10.1088/..

6

Plasma assisted molecular beam epitaxial growth of GaN with..:

Li, Zhen-Hua ; Shao, Peng-Fei ; Shi, Gen-Jun...
Chinese Physics B. 31 (2022) 1 - p. 018102 , 2022

Link: https://doi.org/10.1088/..

7

Study on the self-absorption of InGaN quantum wells at high..:

Zhou, Jing ; Chen, Peng ; Liu, Meng-Han...
Applied Optics. 59 (2020) 16 - p. 4790 , 2020

Link: https://doi.org/10.1364/..

8

Mg acceptor activation mechanism and hole transport charact..:

Xu, Qing-Jun ; Zhang, Shi-Ying ; Liu, Bin...
Chinese Physics B. 29 (2020) 5 - p. 058103 , 2020

Link: https://doi.org/10.1088/..

9

Theoretical analysis for AlGaN avalanche photodiodes with m..:

Dong, Ke-Xiu ; Chen, Dun-Jun ; Cai, Qing..
Chinese Physics B. 29 (2020) 8 - p. 088502 , 2020

Link: https://doi.org/10.1088/..

10

High-${k}$HfO2-Based AlGaN/GaN MIS-HEMTs With Y2O3 Interfac..:

Shi, Ya-Ting ; Xu, Wei-Zong ; Zeng, Chang-Kun...
IEEE Journal of the Electron Devices Society. 8 (2020) - p. 15-19 , 2020

Link: https://doi.org/10.1109/..

11

Effect of a Single Threading Dislocation on Electrical and ..:

Su, Lin-Lin ; Zhou, Dong ; Liu, Qing...
Chinese Physics Letters. 37 (2020) 6 - p. 068502 , 2020

Link: https://doi.org/10.1088/..

12

Approach to Single-Mode Dominated Resonant Emission in GaN-..:

Liu, Meng-Han ; Chen, Peng ; Xie, Zi-Li...
Chinese Physics Letters. 37 (2020) 5 - p. 054204 , 2020

Link: https://doi.org/10.1088/..

13

ε-Ga2O3: A Promising Candidate for High-Electron-Mobility T..:

Wang, Jin ; Guo, Hui ; Zhu, Cheng-Zhang...
IEEE Electron Device Letters. , 2020

Link: https://doi.org/10.1109/..

14

Homo-epitaxial growth of high crystal quality GaN thin film..:

Wu, Yao-Zheng ; Liu, Bin ; Li, Zhen-Hua...
Journal of Crystal Growth. 506 (2019) - p. 30-35 , 2019

Link: https://doi.org/10.1016/..

15

Negative transconductance effect in p-GaN gate AlGaN/GaN HE..:

Ge, Mei ; Cai, Qing ; Zhang, Bao-Hua...
Chinese Physics B. 28 (2019) 10 - p. 107301 , 2019

Link: https://doi.org/10.1088/..