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Dvurechensky, A. V.
37
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1
EPM '89: 3rd International Conference on Energy Pulse and P..
Physical Research ; 13
Ageev, V
;
Akchulakov, M. T
;
Albert, M
... - Reprint 2021 . , [2022]
Link:
https://doi.org/10.1515/..
?
2
Ge/Si heterostructures with coherent Ge quantum dots in sil..:
Pchelyakov, O P
;
Dvurechensky, A V
;
Latyshev, A V
.
Semiconductor Science and Technology. 26 (2010) 1 - p. 014027 , 2010
Link:
https://doi.org/10.1088/..
?
3
SOI STRUCTURES FORMATION BY PULSED HEATING:
, In:
EPM '89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.–8. 1989, Dresden, GDR
,
Kolyadenko, S. H.
;
Dvurechensky, A. V.
;
Vasilyev, A. L.
- p. 395-397 , 1989
Link:
https://doi.org/10.1515/..
?
4
A planar channeling technique to study the structure of the..:
Pokhil, G.P.
;
Tulinov, A.F.
;
Turinge, A.A.
..
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 13 (1986) 1-3 - p. 84-86 , 1986
Link:
https://doi.org/10.1016/..
?
5
The phase composition of SiOx films:
Dvurechensky, A.V.
;
Edelman, F.L.
;
Ryazantsev, I.A.
Thin Solid Films. 91 (1982) 1 - p. L55-L57 , 1982
Link:
https://doi.org/10.1016/..
?
6
Accumulation of defects in silicon at superhigh doses of el..:
Akhmetov, V. D.
;
Bolotov, V. V.
;
Dvurechensky, A. V.
...
Radiation Effects. 53 (1980) 1-2 - p. 33-39 , 1980
Link:
https://doi.org/10.1080/..
?
7
On the nature of the defect reverse annealing in ion-implan..:
Dvurechensky, A. V.
;
Ryazantsev, I. A.
Radiation Effects. 46 (1980) 3-4 - p. 129-132 , 1980
Link:
https://doi.org/10.1080/..
?
8
Defects and impurities interaction enhanced by ionization i..:
Dvurechensky, A. V.
;
Rjazantsev, I. A.
;
Smirnov, L. S.
Radiation Effects. 49 (1980) 1-3 - p. 13-15 , 1980
Link:
https://doi.org/10.1080/..
?
9
Spectral emissivity and absorption coefficient of silica gl..:
Dvurechensky, A.V.
;
Petrov, V.A.
;
Yu Reznik, V.
Infrared Physics. 19 (1979) 3-4 - p. 465-469 , 1979
Link:
https://doi.org/10.1016/..
?
10
Defect annealing in polycrystalline silicon films:
Dvurechensky, A.V.
;
Gerasimenko, N.N.
;
Potapova, L.P.
Thin Solid Films. 52 (1978) 3 - p. 329-332 , 1978
Link:
https://doi.org/10.1016/..
?
11
Production and rearrangement of radiation defects in ion im..:
Dvurechensky, A. V.
;
Smirnov, L. S.
Radiation Effects. 37 (1978) 3-4 - p. 173-178 , 1978
Link:
https://doi.org/10.1080/..
?
12
The mechanisms of impurity redistribution on laser-annealin..:
Dvurechensky, A. V.
;
Kachurin, G. A.
;
Antonenko, A. Kh.
Radiation Effects. 37 (1978) 3-4 - p. 179-181 , 1978
Link:
https://doi.org/10.1080/..
?
13
High dose effects in ion implantation:
Dvurechensky, A. V.
;
Gerasimenko, N. N.
;
Romanov, S. I.
.
Radiation Effects. 30 (1976) 2 - p. 69-71 , 1976
Link:
https://doi.org/10.1080/..
?
14
Defect annealing investigation in ion implanted Si by CESR ..:
Dvurechensky, A. V.
;
Cerasimenko, N. N.
;
Glazman, V. B.
Radiation Effects. 31 (1976) 1 - p. 37-40 , 1976
Link:
https://doi.org/10.1080/..
?
15
Reaction of 1-(oxiran-2-ylmethyl)-1H-indole-3-carboxaldehyd..:
Suzdalev, Konstantin F.
;
Den'kina, Sophia V.
;
Starikova, Alena A.
...
Mendeleev Communications. 21 (2011) 4 - p. 231-233 , 2011
Link:
https://doi.org/10.1016/..
1-15