E-LIB Suche - Ergebnisse für: Dvurechensky, A. V.

1

EPM '89: 3rd International Conference on Energy Pulse and P..

Physical Research ; 13

Ageev, V ; Akchulakov, M. T ; Albert, M... - Reprint 2021 . , [2022]

2

Ge/Si heterostructures with coherent Ge quantum dots in sil..:

Pchelyakov, O P ; Dvurechensky, A V ; Latyshev, A V.
Semiconductor Science and Technology. 26 (2010) 1 - p. 014027 , 2010

Link: https://doi.org/10.1088/..

3

SOI STRUCTURES FORMATION BY PULSED HEATING:

, In: EPM '89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.–8. 1989, Dresden, GDR,

Kolyadenko, S. H. ; Dvurechensky, A. V. ; Vasilyev, A. L. - p. 395-397 , 1989

Link: https://doi.org/10.1515/..

4

A planar channeling technique to study the structure of the..:

Pokhil, G.P. ; Tulinov, A.F. ; Turinge, A.A...
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 13 (1986) 1-3 - p. 84-86 , 1986

Link: https://doi.org/10.1016/..

5

The phase composition of SiOx films:

Dvurechensky, A.V. ; Edelman, F.L. ; Ryazantsev, I.A.
Thin Solid Films. 91 (1982) 1 - p. L55-L57 , 1982

Link: https://doi.org/10.1016/..

6

Accumulation of defects in silicon at superhigh doses of el..:

Akhmetov, V. D. ; Bolotov, V. V. ; Dvurechensky, A. V....
Radiation Effects. 53 (1980) 1-2 - p. 33-39 , 1980

Link: https://doi.org/10.1080/..

7

On the nature of the defect reverse annealing in ion-implan..:

Dvurechensky, A. V. ; Ryazantsev, I. A.
Radiation Effects. 46 (1980) 3-4 - p. 129-132 , 1980

Link: https://doi.org/10.1080/..

8

Defects and impurities interaction enhanced by ionization i..:

Dvurechensky, A. V. ; Rjazantsev, I. A. ; Smirnov, L. S.
Radiation Effects. 49 (1980) 1-3 - p. 13-15 , 1980

Link: https://doi.org/10.1080/..

9

Spectral emissivity and absorption coefficient of silica gl..:

Dvurechensky, A.V. ; Petrov, V.A. ; Yu Reznik, V.
Infrared Physics. 19 (1979) 3-4 - p. 465-469 , 1979

Link: https://doi.org/10.1016/..

10

Defect annealing in polycrystalline silicon films:

Dvurechensky, A.V. ; Gerasimenko, N.N. ; Potapova, L.P.
Thin Solid Films. 52 (1978) 3 - p. 329-332 , 1978

Link: https://doi.org/10.1016/..

11

Production and rearrangement of radiation defects in ion im..:

Dvurechensky, A. V. ; Smirnov, L. S.
Radiation Effects. 37 (1978) 3-4 - p. 173-178 , 1978

Link: https://doi.org/10.1080/..

12

The mechanisms of impurity redistribution on laser-annealin..:

Dvurechensky, A. V. ; Kachurin, G. A. ; Antonenko, A. Kh.
Radiation Effects. 37 (1978) 3-4 - p. 179-181 , 1978

Link: https://doi.org/10.1080/..

13

High dose effects in ion implantation:

Dvurechensky, A. V. ; Gerasimenko, N. N. ; Romanov, S. I..
Radiation Effects. 30 (1976) 2 - p. 69-71 , 1976

Link: https://doi.org/10.1080/..

14

Defect annealing investigation in ion implanted Si by CESR ..:

Dvurechensky, A. V. ; Cerasimenko, N. N. ; Glazman, V. B.
Radiation Effects. 31 (1976) 1 - p. 37-40 , 1976

Link: https://doi.org/10.1080/..

15

Reaction of 1-(oxiran-2-ylmethyl)-1H-indole-3-carboxaldehyd..:

Suzdalev, Konstantin F. ; Den'kina, Sophia V. ; Starikova, Alena A....
Mendeleev Communications. 21 (2011) 4 - p. 231-233 , 2011

Link: https://doi.org/10.1016/..