E-LIB Suche - Ergebnisse für: Eberlein, T. A. G

1

On the doping of graphene:

Jones, R. ; Eberlein, T. A. G. ; Briddon, P. R.
physica status solidi (a). 205 (2008) 9 - p. 2262-2264 , 2008

Link: https://doi.org/10.1002/..

2

Doping of graphene: Density functional calculations of char..:

Eberlein, T. A. G. ; Jones, R. ; Goss, J. P..
Physical Review B. 78 (2008) 4 - p. , 2008

Link: https://doi.org/10.1103/..

3

Shallow acceptors in GaN:

Eberlein, T. A. G. ; Jones, R. ; Öberg, S..
Applied Physics Letters. 91 (2007) 13 - p. , 2007

Link: https://doi.org/10.1063/..

4

Density functional theory calculation of theDIoptical cente..:

Eberlein, T. A. G. ; Jones, R. ; Öberg, S..
Physical Review B. 74 (2006) 14 - p. , 2006

Link: https://doi.org/10.1103/..

5

Effect of charge on the movement of dislocations in SiC:

Eberlein, T. A. G. ; Jones, R. ; Blumenau, A. T...
Applied Physics Letters. 88 (2006) 8 - p. , 2006

Link: https://doi.org/10.1063/..

6

Theory of Dislocations in SiC: The Effect of Charge on Kink..:

Eberlein, T.A.G. ; Jones, R. ; Blumenau, A.T.
Materials Science Forum. 527-529 (2006) - p. 321-326 , 2006

Link: https://doi.org/10.4028/..

7

Electrical activity of Er and Er-O centers in silicon:

Prezzi, D. ; Eberlein, T. A. G. ; Jones, R....
Physical Review B. 71 (2005) 24 - p. , 2005

Link: https://doi.org/10.1103/..

8

The effect of charge on kink migration at 90° partial dislo..:

Blumenau, A. T. ; Eberlein, T. A. G. ; Jones, R....
physica status solidi (a). 202 (2005) 5 - p. 877-882 , 2005

Link: https://doi.org/10.1002/..

9

Optical and electrical properties of vanadium and erbium in..:

Prezzi, D. ; Eberlein, T. A. G. ; Filhol, J.-S....
Physical Review B. 69 (2004) 19 - p. , 2004

Link: https://doi.org/10.1103/..

10

Electrical and optical properties of rod-like defects in si..:

Goss, J. P. ; Briddon, P. R. ; Eberlein, T. A. G....
Applied Physics Letters. 85 (2004) 20 - p. 4633-4635 , 2004

Link: https://doi.org/10.1063/..

11

Hydrogen-related photoluminescent centers in SiC:

Prezzi, D. ; Eberlein, T. A. G. ; Jones, R....
Physical Review B. 70 (2004) 20 - p. , 2004

Link: https://doi.org/10.1103/..

12

Hydrogen molecules in 4H-SiC and 2H-GaN:

Eberlein, T A G ; Huggett, L ; Jones, R.
Journal of Physics: Condensed Matter. 15 (2003) 39 - p. S2897-S2902 , 2003

Link: https://doi.org/10.1088/..

13

Ro-vibrational modes of H2 in 4H–SiC and 2H–GaN:

Eberlein, T.A.G. ; Huggett, L. ; Jones, R..
Physica B: Condensed Matter. 340-342 (2003) - p. 171-174 , 2003

Link: https://doi.org/10.1016/..

14

Z1/Z2Defects in4H−SiC:

Eberlein, T. A. G. ; Jones, R. ; Briddon, P. R.
Physical Review Letters. 90 (2003) 22 - p. , 2003

Link: https://doi.org/10.1103/..

15

Planar interstitial aggregates in Si:

Goss, J P ; Eberlein, T A G ; Jones, R...
Journal of Physics: Condensed Matter. 14 (2002) 48 - p. 12843-12853 , 2002

Link: https://doi.org/10.1088/..