E-LIB Suche - Ergebnisse für: Eisele, J. H.

1

Identification and thermal healing of focused ion beam-indu..:

Ji, K. ; Schnedler, M. ; Lan, Q....
Applied Physics Express. 17 (2024) 1 - p. 016505 , 2024

Link: https://doi.org/10.35848..

2

Atomically resolved study of initial stages of hydrogen etc..:

Rosenzweig, D. S. ; Hansemann, M. N. L. ; Schnedler, M...
Physical Review Materials. 6 (2022) 12 - p. , 2022

Link: https://doi.org/10.1103/..

3

STM simulation of high aspect ratio tunneling behavior on t..:

, In: 2022 Compound Semiconductor Week (CSW),

Hansemann, Moritz N. L. ; Rosenzweig, D. ; Eisele, H. - p. 1-2 , 2022

Link: https://doi.org/10.1109/..

4

GaAs(110) Surface Modifications Introduced by Hydrogen:

, In: 2022 Compound Semiconductor Week (CSW),

Rosenzweig, D.S. ; Hansemann, M. ; Ebert, Ph... - p. 1-2 , 2022

Link: https://doi.org/10.1109/..

5

From surface data to bulk properties: a case study for anti..:

Farin, P ; Eisele, H ; Dähne, M.
Journal of Physics D: Applied Physics. 54 (2021) 20 - p. 205302 , 2021

Link: https://doi.org/10.1088/..

6

Interplay of intrinsic and extrinsic states in pinning and ..:

Freter, L. ; Wang, Y. ; Schnedler, M....
Journal of Applied Physics. 128 (2020) 18 - p. , 2020

Link: https://doi.org/10.1063/..

7

Submonolayer Quantum Dots:

, In: Semiconductor Nanophotonics; Springer Series in Solid-State Sciences,

Owschimikow, N. ; Herzog, B. ; Lingnau, B.... - p. 13-51 , 2020

Link: https://doi.org/10.1007/..

8

Iuliacumite: A Novel Chemical Short-Range Order in a Two-Di..:

Schnedler, M. ; Xu, T. ; Lefebvre, I....
Nano Letters. 19 (2019) 12 - p. 8801-8805 , 2019

Link: https://doi.org/10.1021/..

9

Probing defect states in polycrystalline GaN grown on Si(11..:

Hsiao, F.-M. ; Schnedler, M. ; Portz, V....
Journal of Applied Physics. 121 (2017) 1 - p. , 2017

Link: https://doi.org/10.1063/..

10

Fermi-level pinning and intrinsic surface states of Al1−xIn..:

Portz, V. ; Schnedler, M. ; Lymperakis, L....
Applied Physics Letters. 110 (2017) 2 - p. , 2017

Link: https://doi.org/10.1063/..

11

Strain and compositional fluctuations in Al0.81In0.19N/GaN ..:

Portz, V. ; Schnedler, M. ; Duchamp, M....
Applied Physics Letters. 109 (2016) 13 - p. , 2016

Link: https://doi.org/10.1063/..

12

Strong charge-carrier localization in InAs/GaAs submonolaye..:

Quandt, D. ; Schulze, J.-H. ; Schliwa, A....
Physical Review B. 91 (2015) 23 - p. , 2015

Link: https://doi.org/10.1103/..

13

Tracking the subsurface path of dislocations in GaN using s..:

Weidlich, P. H. ; Schnedler, M. ; Portz, V....
Journal of Applied Physics. 118 (2015) 3 - p. , 2015

Link: https://doi.org/10.1063/..

14

Polarity-dependent pinning of a surface state:

Schnedler, M. ; Portz, V. ; Eisele, H...
Physical Review B. 91 (2015) 20 - p. , 2015

Link: https://doi.org/10.1103/..

15

Meandering of overgrown v-shaped defects in epitaxial GaN l..:

Weidlich, P. H. ; Schnedler, M. ; Portz, V....
Applied Physics Letters. 105 (2014) 1 - p. , 2014

Link: https://doi.org/10.1063/..