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Elpelt, Rudolf
17  results:
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1

Characteristics of SiC MOSFET Compact Models Suitable for V..:

, In: 2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia),
Sochor, Paul ; Huerner, Andreas ; Sun, Qing. - p. 112-119 , 2023
Link: https://doi.org/10.23919..
 
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2

Overcurrent turn-off robustness and stability of the switch..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Palanisamy, Shanmuganathan ; Basler, Thomas ; Liu, Xing... - p. 257-260 , 2022
Link: https://doi.org/10.1109/..
 
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3

Simulation of a Short-Circuit Rugged Trench IGBT with a JFE..:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Arnold, Thorsten ; Elpelt, Rudolf ; Thees, Hans-Jurgen... - p. 462-465 , 2020
Link: https://doi.org/10.1109/..
 
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4

SiC MPS Devices: One Step Closer to the Ideal Diode:

Elpelt, Rudolf ; Draghici, Mihai ; Gerlach, Rolf..
Materials Science Forum.  924 (2018)  - p. 609-612 , 2018
Link: https://doi.org/10.4028/..
 
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5

Employing Scanning Spreading Resistance Microscopy (SSRM) f..:

Elpelt, Rudolf ; Zippelius, Bernd ; Doering, Stefan.
Materials Science Forum.  897 (2017)  - p. 295-298 , 2017
Link: https://doi.org/10.4028/..
 
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6

Comparative Simulation Study of Dynamic Behavior of the Bod..:

Elpelt, Rudolf ; Zippelius, Bernd ; Domes, Daniel
Materials Science Forum.  858 (2016)  - p. 817-820 , 2016
Link: https://doi.org/10.4028/..
 
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7

Power Electronics in Kraftfahrzeug und Aeronautik (PELIKAn) 

robuste Technologien für SiC basierte Leistungstransistore... 
Elpelt, Rudolf , 2014
Link: http://edok01.tib.uni-ha..
 
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8

High Voltage SiC Vertical JFET for High Power RF Applicatio..:

Hecht, Christian ; Elpelt, Rudolf ; Schörner, Reinhold..
Materials Science Forum.  717-720 (2012)  - p. 1037-1040 , 2012
Link: https://doi.org/10.4028/..
 
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9

Fast Switching with SiC VJFETs - Influence of the Device To..:

Elpelt, Rudolf ; Friedrichs, Peter ; Biela, Jürgen
Materials Science Forum.  645-648 (2010)  - p. 933-936 , 2010
Link: https://doi.org/10.4028/..
 
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10

Avalanche Capability of Unipolar SiC Diodes: A Feature for ..:

Hilsenbeck, Jochen ; Treu, Michael ; Rupp, Roland..
Materials Science Forum.  615-617 (2009)  - p. 659-662 , 2009
Link: https://doi.org/10.4028/..
 
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11

Electro-Thermal SPICE Model for High-Voltage SiC VJFETs:

Elpelt, Rudolf ; Friedrichs, Peter ; Hippeli, J....
Materials Science Forum.  615-617 (2009)  - p. 731-734 , 2009
Link: https://doi.org/10.4028/..
 
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12

SiC JFET: Currently the Best Solution for an Unipolar SiC H..:

Rueschenschmidt, Kathrin ; Treu, Michael ; Rupp, Roland...
Materials Science Forum.  600-603 (2008)  - p. 901-906 , 2008
Link: https://doi.org/10.4028/..
 
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13

A Surge Current Stable and Avalanche Rugged SiC Merged pn S..:

Treu, Michael ; Rupp, Roland ; Tai, Chee Siew...
Materials Science Forum.  527-529 (2006)  - p. 1155-1158 , 2006
Link: https://doi.org/10.4028/..
 
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14

Large Area, Avalanche-Stable 4H-SiC PiN Diodes with VBR > 4..:

Peters, Dethard ; Elpelt, Rudolf ; Schörner, Reinhold...
Materials Science Forum.  483-485 (2005)  - p. 977-980 , 2005
Link: https://doi.org/10.4028/..
 
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15

BIFET – a Novel Bipolar SiC Switch for High Voltage Power E..:

Mitlehner, Heinz ; Friedrichs, Peter ; Elpelt, Rudolf...
Materials Science Forum.  457-460 (2004)  - p. 1245-1248 , 2004
Link: https://doi.org/10.4028/..
 
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