I agree that this site is using cookies. You can find further informations here.
X
Eneman, G.
66  results:
Search for persons X
?
1

Nanosheet-based Device Architectures with Front/Backside Co..:

, In: 2023 21st International Workshop on Junction Technology (IWJT),
Veloso, A. ; Eneman, G. ; Matagne, P.... - p. 1-5 , 2023
Link: https://doi.org/10.23919..
 
?
2

Backside Power Delivery: Game Changer and Key Enabler of Ad..:

, In: 2023 International Electron Devices Meeting (IEDM),
Veloso, A. ; Vermeersch, B. ; Chen, R.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
?
3

Degradation Mapping and Impact of Device Dimension on IGZO ..:

Rinaudo, Pietro ; Chasin, A. ; Franco, J....
IEEE Transactions on Device and Materials Reliability.  23 (2023)  3 - p. 337-345 , 2023
Link: https://doi.org/10.1109/..
 
?
4

Monte Carlo Analysis of -Type SiGe-Channel Nanosheet Perfor..:

Bufler, F. M. ; Arimura, H. ; Favia, P....
IEEE Transactions on Electron Devices.  69 (2022)  11 - p. 6384-6387 , 2022
Link: https://doi.org/10.1109/..
 
?
5

Innovations in Transistor Architecture and Device Connectiv..:

, In: 2022 International Conference on IC Design and Technology (ICICDT),
Veloso, A. ; Eneman, G. ; De Keersgieter, A.... - p. 51-54 , 2022
Link: https://doi.org/10.1109/..
 
?
6

Insights into Scaled Logic Devices Connected from Both Wafe..:

, In: 2022 International Electron Devices Meeting (IEDM),
Veloso, A. ; Eneman, G. ; Matagne, P.... - p. 23.3.1-23.3.4 , 2022
Link: https://doi.org/10.1109/..
 
?
7

Comparison of Electrical Performance of Co-Integrated Forks..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Ritzenthaler, R. ; Mertens, H. ; Eneman, G.... - p. 26.2.1-26.2.4 , 2021
Link: https://doi.org/10.1109/..
 
?
8

Nanowire & nanosheet FETs for ultra-scaled, high-density lo..:

Veloso, A. ; Huynh-Bao, T. ; Matagne, P....
Solid-State Electronics.  168 (2020)  - p. 107736 , 2020
Link: https://doi.org/10.1016/..
 
?
9

TCAD-Assisted MultiPhysics Modeling & Simulation for Accele..:

, In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Mohiyaddin, F. A. ; Simion, G. ; Stuyck, N. I. Dumoulin... - p. 253-256 , 2020
Link: https://doi.org/10.23919..
 
?
10

Addressing Key Challenges for SiGe-pFin Technologies: Fin I..:

, In: 2020 IEEE Symposium on VLSI Technology,
Arimura, H. ; Capogreco, E. ; Wostyn, K.... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
?
11

Electrical Activity of Extended Defects in Relaxed InxGa1−x..:

Claeys, C. ; Hsu, P.-C. ; Mols, Y....
ECS Journal of Solid State Science and Technology.  9 (2020)  3 - p. 033001 , 2020
Link: https://doi.org/10.1149/..
 
?
12

Erratum: Electrical Activity of Extended Defects in Relaxed..:

Claeys, C. ; Hsu, P.-C. ; Mols, Y....
ECS Journal of Solid State Science and Technology.  9 (2020)  3 - p. 039002 , 2020
Link: https://doi.org/10.1149/..
 
?
13

Nanowire & Nanosheet Fets for Advanced Ultra-Scaled, High-D..:

, In: 2020 China Semiconductor Technology International Conference (CSTIC),
Veloso, A. ; Matagne, P. ; Eneman, G.... - p. 1-4 , 2020
Link: https://doi.org/10.1109/..
 
?
14

TEM investigations of gate-all-around nanowire devices:

Favia, P ; Richard, O ; Eneman, G...
Semiconductor Science and Technology.  34 (2019)  12 - p. 124003 , 2019
Link: https://doi.org/10.1088/..
 
?
15

Vertical Nanowire and Nanosheet FETs: Device Features, Nove..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Veloso, A. ; Hikavyy, A. ; Loo, R.... - p. 11.1.1-11.1.4 , 2019
Link: https://doi.org/10.1109/..
 
1-15