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Eng Fong Chor, Eng Fong Chor
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1

Heterojunction Bipolar Transistor with an Additional Minori..:

Eng Fong Chor, Eng Fong Chor ; Cai Jun Peng, Cai Jun Peng
Japanese Journal of Applied Physics.  36 (1997)  11R - p. 6694 , 1997
Link: https://doi.org/10.1143/..
 
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2

Influence of PECVD deposited SiNxpassivation layer thicknes..:

Singh, Sarab Preet ; Liu, Yi ; Ngoo, Yi Jie...
Journal of Physics D: Applied Physics.  48 (2015)  36 - p. 365104 , 2015
Link: https://doi.org/10.1088/..
 
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3

Annealing Pressure and Ambient Dependent RuOxSchottky Conta..:

Kyaw, Lwin Min ; Liu, Yi ; Lai, Mei Ying...
ECS Journal of Solid State Science and Technology.  5 (2015)  2 - p. Q17-Q23 , 2015
Link: https://doi.org/10.1149/..
 
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4

Effects of Annealing Pressure and Ambient on Thermally Robu..:

Kyaw, Lwin Min ; Liu, Yi ; Lai, Mei Ying...
ECS Transactions.  66 (2015)  1 - p. 249-257 , 2015
Link: https://doi.org/10.1149/..
 
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5

Silicon Nitride Thickness Dependent Electrical Properties o..:

Singh, Sarab Preet ; Liu, Yi ; Kyaw, Lwin Min...
ECS Transactions.  61 (2014)  4 - p. 215-224 , 2014
Link: https://doi.org/10.1149/..
 
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6

Fabrication and Performance of InAlN/GaN-on-Si MOSHEMTs wit..:

Bera, Milan Kumar ; Liu, Yi ; Kyaw, Lwin Min...
ECS Transactions.  61 (2014)  4 - p. 271-280 , 2014
Link: https://doi.org/10.1149/..
 
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7

Low Thermal Budget Au-Free Hf-Based Ohmic Contacts on InAlN..:

Liu, Yi ; Kyaw, Lwin Min ; Bera, Milan Kumar...
ECS Transactions.  61 (2014)  4 - p. 319-327 , 2014
Link: https://doi.org/10.1149/..
 
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8

Gold-Free InAlN/GaN Schottky Gate HEMT On Si (111) Substrat..:

Kyaw, Lwin Min ; Liu, Yi ; Bera, Milan Kumar...
ECS Transactions.  53 (2013)  2 - p. 75-83 , 2013
Link: https://doi.org/10.1149/..
 
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9

Thickness Dependent Electrical Characteristics of InAlN/GaN..:

Bera, Milan Kumar ; Liu, Yi ; Kyaw, Lwin Min..
ECS Transactions.  53 (2013)  2 - p. 65-74 , 2013
Link: https://doi.org/10.1149/..
 
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10

Doping-free fabrication of n-type random network single-wal..:

Huang, Leihua ; Chor, Eng Fong ; Wu, Yihong
Physica E: Low-dimensional Systems and Nanostructures.  43 (2011)  7 - p. 1365-1370 , 2011
Link: https://doi.org/10.1016/..
 
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11

Fabrication of single-walled carbon nanotube Schottky diode..:

Huang, Leihua ; Chor, Eng Fong ; Wu, Yihong.
Carbon.  48 (2010)  4 - p. 1298-1304 , 2010
Link: https://doi.org/10.1016/..
 
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12

Integration of Al Segregated NiSiGe/SiGe Source/Drain Conta..:

Sinha, Mantavya ; Lee, Rinus T. P. ; Devi, Sivasubramaniam Nandini...
ECS Transactions.  19 (2009)  1 - p. 323-330 , 2009
Link: https://doi.org/10.1149/..
 
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13

Tuning the Schottky barrier height of nickel silicide on p-..:

Sinha, Mantavya ; Chor, Eng Fong ; Yeo, Yee-Chia
Applied Physics Letters.  92 (2008)  22 - p. , 2008
Link: https://doi.org/10.1063/..
 
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14

Improved DC performance of AlGaN/GaN high electron mobility..:

Liu, Chang ; Chor, Eng Fong ; Tan, Leng Seow
Thin Solid Films.  515 (2007)  10 - p. 4369-4372 , 2007
Link: https://doi.org/10.1016/..
 
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15

Effects of chemical and plasma surface treatments on the O2..:

Lim, Janis ; Chor, Eng Fong ; Tan, Leng Seow
Thin Solid Films.  515 (2007)  10 - p. 4471-4475 , 2007
Link: https://doi.org/10.1016/..
 
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