Erlebach, Axel
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1

Quasi-Ballistic Drift-Diffusion Simulation of SiGe Nanowire..:

Lee, Ko-Hsin ; Erlebach, Axel ; Penzin, Oleg.
IEEE Journal of the Electron Devices Society.  9 (2021)  - p. 387-392 , 2021
 
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2

TCAD methodology for simulation of GaN-HEMT power devices:

, In: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD),
Strauss, Stephan ; Erlebach, Axel ; Cilento, Tommaso... - p. 257-260 , 2014
 
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4

Accurate and efficient TCAD model for the formation and dis..:

Zechner, Christoph ; Zographos, Nikolas ; Matveev, Dmitri.
Materials Science and Engineering: B.  124-125 (2005)  - p. 401-403 , 2005
 
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5

Phase-field model for the dopant redistribution during soli..:

Zechner, Christoph ; Matveev, Dmitri ; Erlebach, Axel
Materials Science and Engineering: B.  114-115 (2004)  - p. 162-165 , 2004
 
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6

Influence of HALO and drain-extension doping gradients on t..:

Erlebach, Axel ; Feudel, Thomas ; Schenk, Andreas.
Materials Science and Engineering: B.  114-115 (2004)  - p. 15-19 , 2004
 
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