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Fang, Yean-Kuen
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1

Temperature coefficient of resistance related to amorphous ..:

, In: 2016 3rd International Conference on Devices, Circuits and Systems (ICDCS),
Su, Jyun-Hao ; Yeh, Wen-Kuan ; Chang, Wen-Teng... - p. 63-67 , 2016
Link: https://doi.org/10.1109/..
 
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2

Investigation of low-frequency noise of 28-nm technology pr..:

Kao, Tsung-Hsien ; Chang, Shoou-Jinn ; Fang, Yean-Kuen...
Solid-State Electronics.  115 (2016)  - p. 7-11 , 2016
Link: https://doi.org/10.1016/..
 
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3

Studies of the new findings in preparing a scaled amorphous..:

Lin, Cheng-I ; Fang, Yean-Kuen ; Kuo, Che-Hao
Applied Physics A.  116 (2014)  4 - p. 1655-1660 , 2014
Link: https://doi.org/10.1007/..
 
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4

Investigation of trap properties in high-k/metal gate p-typ..:

Kao, Tsung-Hsien ; Chang, Shoou-Jinn ; Fang, Yean-Kuen...
Applied Physics Letters.  105 (2014)  6 - p. , 2014
Link: https://doi.org/10.1063/..
 
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5

Investigation of trap properties of Hf0.83Zr0.17O2high-kgat..:

Tsai, Shih-Chang ; Wu, San-Lein ; Huang, Po-Chin...
Japanese Journal of Applied Physics.  53 (2014)  8S1 - p. 08LB03 , 2014
Link: https://doi.org/10.7567/..
 
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6

Investigation of Low-Frequency Noise Characterization of 28..:

Tsai, Shih-Chang ; Wu, San-Lein ; Chen, Jone-Fang...
Journal of Nanomaterials.  2014 (2014)  - p. 1-6 , 2014
Link: https://doi.org/10.1155/..
 
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7

Trap properties of high-k/metal gate pMOSFETs with aluminum..:

Kao, Tsung-Hsien ; Wu, San-Lein ; Tsai, Kai-Shiang...
Japanese Journal of Applied Physics.  53 (2014)  4S - p. 04EC14 , 2014
Link: https://doi.org/10.7567/..
 
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8

Effect of gate barrier and channel buffer layer on electric..:

Lin, Cheng-I ; Fang, Yean-Kuen ; Chang, Wei-Chao..
Microelectronics Reliability.  54 (2014)  5 - p. 905-910 , 2014
Link: https://doi.org/10.1016/..
 
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9

The High Performance Nanorod Pd/WO3/Silicon Carbide/Silicon..:

Juang, Feng-Renn ; Fang, Yean-Kuen ; Ke, Jian-Cun
ECS Transactions.  41 (2012)  20 - p. 79-84 , 2012
Link: https://doi.org/10.1149/..
 
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10

Dependence of the Au/SnOx/n-LTPS/glass thin film MOS Schott..:

Juang, Feng-Renn ; Fang, Yean-Kuen ; Chiu, Hung-Yu
Microelectronics Reliability.  52 (2012)  2 - p. 425-429 , 2012
Link: https://doi.org/10.1016/..
 
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11

A novel method to improve cell endurance window in source-s..:

Tsair, Yong-Shiuan ; Fang, Yean-Kuen ; Juang, Feng-Renn...
Microelectronics Reliability.  52 (2012)  6 - p. 1055-1059 , 2012
Link: https://doi.org/10.1016/..
 
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12

The low temperature polysilicon (LTPS) thin film MOS Schott..:

Juang, Feng-Renn ; Fang, Yean-Kuen ; Chiang, Yen-Ting...
Sensors and Actuators B: Chemical.  156 (2011)  1 - p. 338-342 , 2011
Link: https://doi.org/10.1016/..
 
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13

Improvement of TDDB reliability, characteristics of HfO2 hi..:

Hsu, Chia-Wei ; Fang, Yean-Kuen ; Yeh, Wen-Kuan...
Microelectronics Reliability.  50 (2010)  5 - p. 618-621 , 2010
Link: https://doi.org/10.1016/..
 
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14

The effect of post-hydrogen annealing and multilayer channe..:

Lin, Cheng-I ; Fang, Yean-Kuen ; Juang, Feng-Renn...
Journal of Physics D: Applied Physics.  43 (2010)  19 - p. 195102 , 2010
Link: https://doi.org/10.1088/..
 
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15

Narrow Width and Length Dependence of SiGe and Sallow-Trenc..:

Cheng, Chung-Yun ; Fang, Yean-Kuen ; Hsieh, Jang-Cheng...
Japanese Journal of Applied Physics.  48 (2009)  4S - p. 04C033 , 2009
Link: https://doi.org/10.1143/..
 
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